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Epitaxial structure of a purple light LED and manufacturing method thereof

A technology of epitaxial structure and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as insufficient electron migration, achieve the effects of improving internal quantum effects, reducing non-radiative recombination, and improving crystal quality

Pending Publication Date: 2020-12-08
FUJIAN PRIMA OPTOELECTRONICS CO LTD
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] For this reason, it is necessary to provide an epitaxial wafer that can improve the luminous efficiency of purple LEDs, and solve the problem of insufficient electron migration in the prior art

Method used

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  • Epitaxial structure of a purple light LED and manufacturing method thereof
  • Epitaxial structure of a purple light LED and manufacturing method thereof

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Embodiment Construction

[0049] In order to describe the technical content, structural features, achieved purpose and effect of the technical solution in detail, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0050] see figure 1 , is a method for manufacturing an epitaxial structure of a violet LED, comprising the following steps,

[0051] A method for manufacturing an epitaxial structure of a violet LED, comprising the following steps,

[0052] S100, sputtering an ALN ​​thin film on the substrate;

[0053] S102, growing an aluminum gallium nitrogen buffer layer on the ALN film;

[0054] S103, growing a non-doped AlGaN layer on the AlGaN buffer layer;

[0055] S104, growing a layer of N-type AlGaN on the non-doped AlGaN;

[0056] S105, growing a stress release layer on the N-type AlGaN;

[0057] S106, growing a high-temperature quantum well structure on the stress release layer;

[0058] S107. Growing a light-emitting quantum well ...

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Abstract

The invention discloses an epitaxial structure of a purple light LED and a manufacturing method thereof, and the method comprises the following steps: S100, sputtering an ALN film on a substrate; S102, growing an aluminum-gallium-nitrogen buffer layer on the ALN thin film; S103, growing a non-doped aluminum-gallium-nitrogen layer on the aluminum-gallium-nitrogen buffer layer; and S104, growing a layer of N-type aluminum gallium nitrogen on the non-doped aluminum gallium nitrogen. By sputtering the ALN buffer layer on the substrate, defects caused by large mismatch between the substrate and theALGaN material are reduced, so that the crystal quality of the whole epitaxial layer is improved, dislocation and defects in a quantum well structure are reduced, non-radiative recombination caused by the defects is reduced, the internal quantum effect is improved. On the other hand, the Stack effect QCS in the quantum well structure is effectively limited through the aluminum-gallium-nitrogen barrier layer, and meanwhile, Mg-doped ALxGa(1x)N in the cyclic structure increases two-dimensional electron gas of a material interface, so that the capability of hole injection into a light-emitting region is improved, and the recombination efficiency of electrons and holes in the light-emitting region is improved.

Description

technical field [0001] The invention relates to a structural design and a manufacturing method in the manufacturing of a light-emitting diode. Background technique [0002] A few days ago, the bactericidal function of daily household products has gradually received the attention of consumers. Compared with traditional ultraviolet mercury lamps, ALGaN-based UVC-LEDs do not use mercury and do not require preheating, so they are environmentally friendly and energy-saving. Especially large advantages. In the future, UVC-LED will enter the application market of commercial air conditioners, surface sterilization and water purification in large quantities, which will bring new demand for UVC-LED. However, the structure of UVC-LED needs aluminum gallium nitrogen with high AL components. ALGaN material, the current growth technology cannot obtain ALGaN material with low defect density, and at the same time, there are large spontaneous polarization and piezoelectric polarization in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/12H01L33/14H01L33/20H01L33/32
CPCH01L33/007H01L33/06H01L33/12H01L33/145H01L33/20H01L33/325
Inventor 解向荣吴永胜
Owner FUJIAN PRIMA OPTOELECTRONICS CO LTD
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