Semiconductor device and method of forming the same

Abstract

The present invention provides a semiconductor device and a method for forming the same. The present invention provides a new method for forming a semiconductor device, by replacing the single crystal silicon gate layer in the prior art for forming a high-K metal gate CMOS device with an amorphous silicon gate layer, and by changing the The amorphous silicon gate layer is annealed, so that the amorphous silicon in the amorphous silicon gate is recrystallized to form a polysilicon gate. Since the effective resistance of the gate stack layer in a CMOS device is related to the uniformity of the dopant ion concentration in the crystalline silicon gate and the penetration degree of the dopant ions, it is possible to anneal the amorphous silicon to obtain a better resistance to the dopant ions. The polysilicon with high permeability of the impurity ions can obtain a relatively more uniform doping concentration after doping the P-type or N-type ions in the polysilicon, thereby improving the polysilicon gate layer of the gate structure in the final CMOS device. The uniformity of the dopant ion concentration and the penetration degree of the dopant ions reduce the gate resistance.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a semiconductor device and a method for forming the same. Background technique [0002] Semiconductor device fabrication has thus become increasingly challenging and pushed towards the limits of what is physically possible. So-called high-k metal gate technology has become popular when fabricating CMOS devices with typical gate dimensions less than 50 nm. According to the high-k metal gate manufacturing process flow, the insulating layer included in the gate electrode is composed of the high-k material. This is in contrast to the conventional oxide / polysilicon (poly / SiON) approach, where the gate electrode insulating layer is typically composed of oxide, preferably silicon dioxide or oxynitride in the case of silicon-based devices silicon. At present, a process method for realizing a high-k metal gate in a semiconductor manufacturing process flow includes a...

AI Technical Summary

Problems solved by technology

[0003] At present, in the process of forming semiconductor devices using the gate-first process, due to the non-uniformity and low permeability of the single-crystal silicon gate to doped boron ions, the gate resistance of the semiconductor device increases, thereby improving the performance of the semiconductor device. Operating Voltage

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