A micropipe three-dimensional heterojunction device structure and its preparation method and application

A device structure and heterojunction technology, used in semiconductor devices, electrical components, final product manufacturing, etc., can solve the problems of inability to fabricate micro-tubular three-dimensional heterojunction devices, and achieve wide light emission or light receiving directions and low dark current. , the preparation method is simple

Active Publication Date: 2022-02-25
BEIJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The embodiment of the present invention provides a micropipe-type three-dimensional heterojunction device structure, which solves the problem that the micropipe-type three-dimensional heterojunction device cannot be manufactured in the prior art

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  • A micropipe three-dimensional heterojunction device structure and its preparation method and application
  • A micropipe three-dimensional heterojunction device structure and its preparation method and application
  • A micropipe three-dimensional heterojunction device structure and its preparation method and application

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Embodiment 1

[0061] This embodiment provides a schematic diagram of a three-electrode micropipe three-dimensional heterojunction device structure, as figure 1 shown, the device includes:

[0062] Substrate 101, buffer layer 102, sacrificial layer 103, semiconductor 104, insulating layer 105, two-dimensional material 106, inner wall electrode one 107, inner wall electrode two 108, outer wall electrode 109, micropipe semiconductor / two-dimensional material three-dimensional heterojunction 110. The semiconductor 104 is on the sacrificial layer 103 , and the semiconductor 104 is strained, specifically, it can be a semiconductor compressively strained single layer or a semiconductor strained double layer. The semiconductor 104 and the two-dimensional material 106 are first stacked on the sacrificial layer 103 to form a semiconductor / two-dimensional material planar heterojunction, and further, the sacrificial layer 103 at the bottom is selectively etched away, so that the planar heterojunction i...

Embodiment 2

[0066] This embodiment provides a method for preparing a three-electrode microtube semiconductor / two-dimensional material three-dimensional heterojunction device structure, such as figure 2 shown, including steps:

[0067] (a): On the substrate 101, a buffer layer 102, a sacrificial layer 103, and a semiconductor 104 are sequentially deposited to obtain a complete epitaxial structure. Wherein, optionally, the semiconductor 104 is a semiconductor strained double layer composed of a semiconductor compressively strained layer and an unstrained semiconductor top layer;

[0068] (b): U-shaped mesa is formed by photolithography and etching of the epitaxial structure, and the sacrificial layer 103 is exposed at the same time;

[0069] (c): Deposit an insulating layer 105, and photolithography and etch a pattern on the insulating layer 105, so that the insulating layer 105 covers the rear end area of ​​the U-shaped arm on both sides of the U-shaped mesa and the space between the two...

Embodiment 3

[0076] Such as image 3 Shown, in embodiment 1 of the present invention figure 1 The described three-electrode micropipe three-dimensional heterojunction device can work with two electrodes (an outer wall electrode and any inner wall electrode). Weld electrode leads for the device, optional device packaging, and connect the outer wall electrode and any inner wall electrode to the source meter. At this time, the three-electrode microtubular three-dimensional heterojunction device is a heterojunction photodetector. The current is provided by the source meter (the source meter is also replaced by other current sources or voltage sources). Pass through the microtubular semiconductor / two-dimensional material three-dimensional heterojunction in the radial direction; when the microtubular semiconductor / two-dimensional material three-dimensional heterojunction itself has a photovoltaic effect, no source meter (or external current source, voltage source) is used but only A closed cur...

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Abstract

The present invention relates to a micropipe three-dimensional heterojunction device structure and its preparation method and application. The structure includes: micropipe semiconductor two-dimensional material three-dimensional heterojunction, inner wall electrodes, outer wall electrodes and substrate; The inner wall material of the tubular three-dimensional heterojunction forms electrical contact; the outer wall electrode only forms electrical contact with the outer wall material of the microtubular three-dimensional heterojunction; both the inner wall electrode and the outer wall electrode are insulated from the substrate; the microtubular semiconductor two-dimensional material three-dimensional The heterojunction is a tubular three-dimensional heterojunction formed by the self-curling of the plane heterojunction of the semiconductor two-dimensional material on the substrate. The invention solves the problem that the tubular three-dimensional heterojunction device cannot be prepared, has simple process, can simultaneously realize the preparation of the microtubular three-dimensional heterojunction and the electrical contact between the outer wall material and the outer wall electrode, and also ensures that the current only passes through the microstructure in the radial direction. Tubular three-dimensional heterojunctions can be widely used in photodetection, photovoltaics, gas sensing, electronic components and other fields without passing through planar heterojunctions.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a micropipe type three-dimensional heterojunction device structure and a preparation method and application thereof. Background technique [0002] The strain-driven micro-nano self-rolling technology is the first three-dimensional assembly (3D assembly) technology, which can transform the planar semiconductor structure into a tubular three-dimensional structure with a hollow channel, and the preparation process is simple, which is different from the existing microelectronics and optoelectronics processes It is fully compatible and has important application prospects in many fields. In 2000, Prinz et al. of the Russian Academy of Sciences successfully prepared InGaAs / GaAs self-curling nanotubes on a GaAs substrate for the first time using self-curling technology (Prinz V Y, Seleznev V A, Gutakovsky A K, et al. Free-standing and overgrown InGaAs / GaAs nanotubes, nanoh...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0336H01L31/0224H01L31/0352H01L31/18
CPCH01L31/0336H01L31/022408H01L31/035281H01L31/18Y02E10/50Y02P70/50
Inventor 王琦徐际宇刘昊袁学光柴昭尔刘凯任晓敏
Owner BEIJING UNIV OF POSTS & TELECOMM
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