A micropipe three-dimensional heterojunction device structure and its preparation method and application

Abstract

The present invention relates to a micropipe three-dimensional heterojunction device structure and its preparation method and application. The structure includes: micropipe semiconductor two-dimensional material three-dimensional heterojunction, inner wall electrodes, outer wall electrodes and substrate; The inner wall material of the tubular three-dimensional heterojunction forms electrical contact; the outer wall electrode only forms electrical contact with the outer wall material of the microtubular three-dimensional heterojunction; both the inner wall electrode and the outer wall electrode are insulated from the substrate; the microtubular semiconductor two-dimensional material three-dimensional The heterojunction is a tubular three-dimensional heterojunction formed by the self-curling of the plane heterojunction of the semiconductor two-dimensional material on the substrate. The invention solves the problem that the tubular three-dimensional heterojunction device cannot be prepared, has simple process, can simultaneously realize the preparation of the microtubular three-dimensional heterojunction and the electrical contact between the outer wall material and the outer wall electrode, and also ensures that the current only passes through the microstructure in the radial direction. Tubular three-dimensional heterojunctions can be widely used in photodetection, photovoltaics, gas sensing, electronic components and other fields without passing through planar heterojunctions.

Description

technical field

[0001] The invention relates to the technical field of semiconductor devices, in particular to a micropipe type three-dimensional heterojunction device structure and a preparation method and application thereof. Background technique

[0002] The strain-driven micro-nano self-rolling technology is the first three-dimensional assembly (3D assembly) technology, which can transform the planar semiconductor structure into a tubular three-dimensional structure with a hollow channel, and the preparation process is simple, which is different from the existing microelectronics and optoelectronics processes It is fully compatible and has important application prospects in many fields. In 2000, Prinz et al. of the Russian Academy of Sciences successfully prepared InGaAs / GaAs self-curling nanotubes on a GaAs substrate for the first time using self-curling technology (Prinz V Y, Seleznev V A, Gutakovsky A K, et al. Free-standing and overgrown InGaAs / GaAs nanotubes, nanoh...

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