A Position Sensitive Sensor Based on Resonant Cavity Enhancement
A sensitive sensor, resonant cavity technology, applied in semiconductor devices, sustainable manufacturing/processing, climate sustainability, etc., can solve the problem of the long time for photogenerated carriers to transit the depletion region, and the anti-interference ability of the detection spot position. Low, low device response speed, etc., to achieve the effect of improving anti-interference ability, strong anti-interference ability and time reduction
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[0018] like figure 2 As shown, for a resonant cavity-based position-sensitive sensor with a wavelength of 850 nm and a total chip thickness of about 125 μm, the entire resonant cavity structure is only a few microns thick after fabrication, which is much smaller than the ordinary PSD depletion layer (a dozen or even tens of tens of microns). Micrometer) thickness, so that the raw material consumption is only 10% to 30% of the ordinary PSD; the reflectivity of the upper Bragg reflector reaches more than 80%, and the reflectivity of the lower Bragg reflector reaches more than 95%; the response speed can be increased by about 10 times , reaching the sub-microsecond level. This sensor is implemented as follows:
[0019] 1. Growth of epitaxial wafers
[0020] On the N-type GaAs substrate, metal organic chemical vapor deposition (MOCVD) is used to sequentially epitaxially grow 15 pairs of N-type doping concentration on the N-type substrate 600 with a concentration of 10 18 cm -...
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