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EITZO target material and preparation method thereof

A target and metal oxide technology, applied in the target field, can solve the problems of low mobility and high cost, and achieve the effects of improving mobility, reducing grain size, and improving resolution

Pending Publication Date: 2021-01-26
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the mobility of current commercial oxide semiconductors is still lower than that of LTPS technology. The problem with LTPS technology is the high cost.
The patent number is CN103540895A, and the patent titled sputtering target and metal oxide film discloses a sputtering target and metal oxide film. Although the cost is reduced, the mobility is low

Method used

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  • EITZO target material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0030] As an EITZO target in this embodiment, the EITZO target includes a metal oxide composition, and the metal oxide composition includes the following components by weight: 52% indium oxide, 26% tin oxide, 6% erbium oxide and 16% zinc oxide;

[0031] The preparation process of the EITZO target includes: pressing the metal oxide composition into a billet and then sintering.

[0032] The preparation method of the EITZO target material of the present embodiment comprises the following steps:

[0033] (1) Indium oxide, tin oxide, erbium oxide, zinc oxide are used according to the weight ratio, and ammonium polyacrylate is used as a dispersant, and pure water is ball milled for 4 hours to obtain a mixed powder. The D50 of the mixed powder is less than 0.5 μm. The half peak width of the powder is less than 0.5;

[0034] (2) mixing, stirring and dispersing the mixed powder, binder and deionized water for 2 hours to obtain a mixed slurry, the solid content (weight) of the mixed s...

Embodiment 2

[0039] As an EITZO target in the embodiment of the present invention, the only difference between this embodiment and Embodiment 1 is that the metal oxide composition includes the following components by weight: 50% indium oxide, 25% tin oxide, 8% Erbium oxide and 17% zinc oxide.

Embodiment 3

[0041] As an EITZO target in the embodiment of the present invention, the only difference between this embodiment and Embodiment 1 is that the metal oxide composition includes the following components by weight: 50% indium oxide, 26% tin oxide, 7% Erbium oxide and 17% zinc oxide.

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Abstract

The invention provides an EITZO target material. The EITZO target material comprises a metal oxide composition, the EITZO target material comprises a metal oxide composition, and the metal oxide composition comprises indium oxide, tin oxide, erbium oxide and zinc oxide. The erbium oxide accounts for 5%-10% of the metal oxide composition. The preparation process of the EITZO target material comprises the following steps of pressing the metal oxide composition into a blank, molding and sintering. According to the EITZO target material, indium oxide, tin oxide, erbium oxide and zinc oxide are matched, and the EITZO target material is obtained through forming and sintering, so that the mobility of the EITZO target material after film coating is remarkably improved, the resolution ratio is improved, and the grain size of the EITZO target material is reduced. According to the EITZO target material disclosed by the invention, on the premise of controlling low cost, the mobility of the EITZO target material after film coating is improved, the resolution ratio is improved, the grain size of the EITZO target material is reduced, and the relative density of the EITZO target material is improved.

Description

technical field [0001] The invention relates to the field of target materials, in particular to an EITZO target material and a preparation method thereof. Background technique [0002] Magnetron sputtering technology is an important technology for preparing high-performance thin film materials, which is used in various high-end electronic industries. The active layer of oxide thin film transistor (TFT) prepared by magnetron sputtering has good mobility and stability, which can meet the needs of high-end displays such as high-resolution LCD, AMOLED, and electronic paper. Compared with the LTPS active layer, it has It has the advantages of simple process, low cost and good uniformity. However, the mobility of currently commercially available oxide semiconductors is still lower than that of LTPS technology, and the problem with LTPS technology is high cost. The patent number is CN103540895A, and the patent titled sputtering target and metal oxide film discloses a sputtering t...

Claims

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Application Information

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IPC IPC(8): C04B35/01C23C14/35
CPCC04B35/01C23C14/3407C23C14/3414C23C14/35C04B2235/3293C04B2235/3224C04B2235/3284C04B2235/608C04B2235/77C04B2235/96C04B2235/786
Inventor 刘文杰钟小华童培云朱刘
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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