Space laser film preparation method
A laser thin film and space technology, which is applied in vacuum evaporation coating, coating, sputtering coating, etc., can solve the problems of poor stability of laser thin film, achieve reduced surface and subsurface defects, small spectral shift, high The effect of dimensional stability
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[0033]Example 1: Using quartz glass as the substrate, Al2O3For the film material, SiO2Prepare a 1064nm antireflection film for the protective layer material.
[0034]The substrate is ultrasonically cleaned for 10-30 minutes, then rinsed with deionized water, and finally dried with high-purity nitrogen; the vacuum chamber in the coating machine is scrubbed, and vacuum is pumped; the substrate is placed in the coating machine, and the vacuum chamber door is closed , Perform vacuum pumping again to control the background vacuum of the vacuum chamber in the coating machine to 2×10-6Pa, heat the substrate to keep its temperature at 80℃; before coating, perform ion beam etching on the substrate, bombard the substrate with Ar ion source, use Ar ion source voltage of 650V, etching depth 200nm; use dual ion beam sputtering The equipment is coated on the above-treated substrate, the main ion source voltage is 1250V, argon is used as the main ion source gas, the auxiliary ion source voltage is 65...
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[0037]Example 2: Using quartz glass as the substrate, Ta2O5For the film material, SiO2Prepare high-reflection film for protective layer material.
[0038]The substrate is ultrasonically cleaned for 10-30 minutes, then rinsed with deionized water, and finally dried with high-purity nitrogen; the vacuum chamber in the coating machine is scrubbed, and vacuum is pumped; the substrate is placed in the coating machine, and the vacuum chamber door is closed , Perform vacuum pumping again to control the background vacuum of the vacuum chamber in the coating machine to 2×10-6Pa, heat the substrate to keep its temperature at 80℃; before coating, perform ion beam etching on the substrate, bombard the substrate with Ar ion source, use Ar ion source voltage of 650V, etching depth 200nm; use dual ion beam sputtering equipment Coating on the above-treated substrate, the main ion source voltage is 1250V, argon is used as the main ion source gas, the auxiliary ion source voltage is 650V, the flow ratio...
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