Nano bicrystal-phase indium oxide gas-sensitive material as well as preparation method and application thereof

A nano-twin and indium oxide technology, applied in chemical instruments and methods, analytical materials, material resistance, etc., can solve problems that are not conducive to shape and crystal form regulation, unfavorable industrial production, complicated preparation process, etc., and achieve industrial prospects Good, cheap preparation raw materials, simple operation process
CN112279296AActive Publication Date: 2021-01-29YANCHENG INST OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
YANCHENG INST OF TECH
Publication Date
2021-01-29

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Abstract

The invention discloses a nano bicrystal-phase indium oxide gas-sensitive material as well as a preparation method and application thereof. An indium oxide nano material with a bicrystal-phase structure is prepared by taking soluble indium salt as a raw material, taking water as a solvent, taking trisodium citrate as a crystal form regulator and a surfactant and taking urea as a precipitator and apH value regulator through one-step hydrothermal method. According to the sensitive characteristics of the gas-sensitive material, the nano indium oxide with a heterogeneous junction formed by a unique bicrystal phase structure is designed and prepared, and the material is prepared into a sensor material and has high response to ethanol, dimethylamine and methanol gas. The method has the advantages of cheap preparation raw materials, environment-friendly synthetic route with water as a solvent, simple operation process, high yield, excellent gas sensitivity of the material, and convenience for industrial production.
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Description

technical field

[0001] The invention relates to the technical field of gas-sensing materials, in particular to a nano-twin phase indium oxide gas-sensing material and its preparation method and application. Background technique

[0002] With the continuous emergence of environmental problems, people urgently need to use scientific methods to detect them and develop better solutions to solve air pollution. So far, there are many methods to detect and monitor these toxic and harmful gases, but due to its many shortcomings, it is difficult to be popularized. However, semiconductor gas sensors are simple, light and simple, and have relatively low production and use costs. Low, so it has been widely used in daily life. The continuous development of nanotechnology has led to the extensive development of some small-scale gas-sensing materials with good sensitivity. From then on, many new semiconductor materials such as ZnO, SnO 2 、WO 3 、In 2 o 3 、TiO 2 Wait to be developed. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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