Polishing layer of chemical mechanical polishing pad and preparation method therefor

A chemical mechanical and polishing layer technology, which is applied in the polishing layer of chemical mechanical polishing pads and its preparation field, can solve the problems of polyurethane polishing layer dynamic mechanical properties, heat resistance, poor hydrolytic stability, poor stability, darkening of color, etc. problem, to achieve the effect of prolonged gel time, good elastic modulus retention and uniform dispersion

Active Publication Date: 2021-02-05
万华化学集团电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the selection of polyamines, 3,3′-dichloro-4,4′-diphenylmethanediamine (commonly known as MOCA) is the first choice due to the availability of raw materials and stable supply. Oxidation will occur when heated, the color will become darker, and the stability will deteriorate, and the dynamic mechanical properties, heat resistance, hydrolytic stability, etc. The polishing layer of polishing pads with uniform hardness and density distribution, stable elastic modulus with temperature changes, and excellent dynamic mechanical properties, heat resistance, hydrolytic stability and light stability has become the focus of current research

Method used

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  • Polishing layer of chemical mechanical polishing pad and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Isocyanate prepolymer component: Take 34 parts of TDI-100, 53 parts of PolyTHF 1000, 6 parts of DEG, and react at 75°C for 2 hours to obtain an initial prepolymer with NCO% of 7.5%, then add 7 parts of hydrogenated MDI ( 4,4'-dicyclohexylmethane isocyanate content 92%, 2,4'-dicyclohexylmethane isocyanate content 8%) after stirring for 25 minutes, vacuum defoaming to obtain prepolymer A1 with NCO% 9.0%.

[0040] Weigh 2.5g functional filler and expand polymer hollow microspheres 551DE40d42 and add it to the above 100g isocyanate prepolymer A1, then add 30g MOCA and M-CDEA mixed curing agent (the mass ratio of MOCA:M-CDEA is 60:40) , NH 2 : The stoichiometric ratio of NCO is 90%, the mixture is mixed evenly at high speed, and poured into a mold at 80°C, gelled at room temperature for 15 minutes and demoulded, and then secondary vulcanized at 100°C for 16 hours to obtain polyurethane Polishing layer N1.

Embodiment 2

[0042] Isocyanate prepolymer component: Take 37 parts of TDI-100, 54 parts of PolyTHF 1000, 6 parts of DEG, and react at 75°C for 2 hours to obtain an initial prepolymer with NCO% of 8.0%, then add 3 parts of hydrogenated MDI ( 4,4'-dicyclohexylmethane isocyanate content 92%, 2,4'-dicyclohexylmethane isocyanate content 8%) after stirring for 25 minutes, vacuum defoaming to obtain prepolymer A2 with NCO% 9.0%.

[0043] Weigh 1.5g functional filler expanded polymer hollow microsphere 461DET40d25 and add it to the above 100g isocyanate prepolymer A2, then add 30g MOCA and M-CDEA mixed curing agent (the mass ratio of MOCA:M-CDEA is 60:40) , NH 2 : The stoichiometric ratio of NCO is 90%, the mixture is mixed evenly at high speed, and poured into a mold at 80°C, gelled at room temperature for 20 minutes and demoulded, and then secondary vulcanized at 100°C for 16 hours to obtain polyurethane Polishing layer N2.

Embodiment 3

[0045] Isocyanate prepolymer component: Take 34 parts of TDI-100, 54 parts of PolyTHF 1000, 6 parts of DEG, and react at 75°C for 2 hours to obtain an initial prepolymer with NCO% of 7.5%, then add 7 parts of hydrogenated MDI ( 4,4'-dicyclohexylmethane isocyanate content ≥ 99.7%) was stirred for 20 minutes, and vacuum defoamed to obtain prepolymer A3 with an NCO% of 9.0%.

[0046]Weigh 2.5g functional filler and expand polymer hollow microspheres 551DE40d42 and add it to the above 100g isocyanate prepolymer A2, then add 31g MOCA and M-CDEA mixed curing agent (the mass ratio of MOCA:M-CDEA is 50:50) , NH 2 : The stoichiometric ratio of NCO is 90%, the mixture is mixed evenly at high speed, and poured into a mold at 80°C, gelled at room temperature for 20 minutes and demoulded, and then secondary vulcanized at 100°C for 16 hours to obtain polyurethane Polishing layer N3.

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Abstract

The invention discloses a polishing layer of a chemical mechanical polishing pad and a preparation method therefor. The polishing layer is prepared from raw materials containing a isocyanate prepolymer, a curing agent and a functional filler; the prepolymer is obtained by two-step reaction of diisocyanate and polytetrahydrofuran polyol; the component of the curing agent is an amine cross-linking agent; and the functional filler is an expanded polymer hollow microsphere. The polishing layer prepared thereby has the advantages that the elastic modulus changes stably along with the temperature, the porosity (the micropore volume fraction is high) is high, and the density is uniform.

Description

technical field [0001] The present invention relates to polishing layers of polishing pads that can be used to polish and planarize substrates, such as semiconductor substrates or magnetic disks, and methods for their preparation. Background technique [0002] Semiconductor production typically includes some chemical mechanical planarization (CMP) process. During each CMP process, the polishing pad is planed together with a polishing fluid (eg, an abrasive-containing polishing slurry or an abrasive-free activating fluid) to remove excess material or maintain its planarity for subsequent acceptance of a new layer. The stack of these layers is brought together in such a way as to form an integrated circuit. The fabrication of these semiconductor devices is becoming increasingly complex due to the demand for devices with higher operating speeds, lower leakage currents, and lower power consumption. On the structural side of the device, this means finer geometry and metallizati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/24
CPCB24B37/24
Inventor 罗建勋方璞杨洗孙烨王凯
Owner 万华化学集团电子材料有限公司
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