A secondary metallization process of high temperature co-fired ceramics

Abstract

The invention discloses a secondary metallization process of high-temperature co-fired ceramics, comprising the following steps: (1) degreasing, (2) deoxidizing: the degreasing substrate obtained in step (1) is heated at a temperature of 80-85 ℃ oxidizing solution for 10-20min; obtain the deoxidized film substrate; (3) neutralization, (4) activation, (5) electroless nickel plating and (6) electroless gold plating. The secondary metallization process of high-temperature co-fired ceramics of the present invention can effectively remove the oxide film produced on the surface of the metallized substrate due to high-temperature baking by using potassium permanganate and sodium hydroxide, and form a uniform metallization on the surface of the primary metallized substrate. The pores are conducive to the adsorption of subsequent catalysts, provide reliable adhesion for subsequent coatings, and solve the technical problem of poor adhesion of metal coatings caused by oxides produced in tungsten metallization.

Description

technical field

[0001] The invention belongs to the technical field of high-temperature co-fired ceramics, and specifically relates to a secondary metallization process of high-temperature co-fired ceramics. Background technique

[0002] With the development and automation of industries such as communications, aerospace, automobiles, and consumer electronics, the requirements for the size, function, and stability of electronic circuits and devices used are getting higher and higher. In order to meet the requirements of miniaturization, digitalization, high reliability, low power consumption of electronic circuits and devices, and the localization of key electronic components, multi-layer high temperature co-fired ceramic technology, because of its high structural strength, good chemical stability, With the advantages of excellent electrothermal performance, high wiring density, and low cost, it has developed rapidly in recent years.

[0003] The sintering temperature of the...

Examples

Embodiment 1

[0045] A secondary metallization process for high-temperature co-fired ceramics, comprising the following steps:

[0046] (1) Degreasing

[0047] The primary metallized substrate after high-temperature sintering of alumina ceramic substrate and tungsten paste is ultrasonically soaked in a degreasing solution at a temperature of 50°C for 5 minutes, taken out and rinsed with water to obtain a degreasing substrate;

[0048] The degreasing liquid is composed of the following raw materials: 40g / L degreasing powder and water;

[0049] (2) Deoxidation

[0050] Soak the degreasing substrate obtained in step (1) in an oxidizing solution at a temperature of 80° C. for 20 minutes; obtain a deoxidized film substrate;

[0051] Described oxidation liquid is made up of following raw material: 85g / L potassium permanganate, 8g / L sodium hydroxide and water;

[0052] (3) Neutralization

[0053] Soak the deoxidized film substrate obtained in step (2) in a neutralizing solution at a temperatur...

Embodiment 2

[0067] A secondary metallization process for high-temperature co-fired ceramics, comprising the following steps:

[0068] (1) Degreasing

[0069] The primary metallized substrate after high-temperature sintering of alumina ceramic substrate and tungsten paste is ultrasonically soaked in a degreasing solution at a temperature of 60°C for 3 minutes, taken out and rinsed with water to obtain a degreasing substrate;

[0070] The degreasing liquid is composed of the following raw materials: 60g / L degreasing powder and water;

[0071] (2) Deoxidation

[0072] Soak the degreasing substrate obtained in step (1) in an oxidizing solution at a temperature of 85° C. for 10 minutes; obtain a deoxidized film substrate;

[0073] Described oxidation liquid is made up of following raw material: 95g / L potassium permanganate, 18g / L sodium hydroxide and water;

[0074] (3) Neutralization

[0075] Soak the deoxidized film substrate obtained in step (2) in a neutralizing solution at a temperatu...

Embodiment 3

[0089] A secondary metallization process for high-temperature co-fired ceramics, comprising the following steps:

[0090] (1) Degreasing

[0091] The primary metallized substrate after high-temperature sintering of alumina ceramic substrate and tungsten paste is ultrasonically soaked in a degreasing solution at a temperature of 55°C for 4 minutes, taken out and rinsed with water to obtain a degreasing substrate;

[0092] The degreasing liquid is composed of the following raw materials: 50g / L degreasing powder and water;

[0093] (2) Deoxidation

[0094] Soak the degreasing substrate obtained in step (1) in an oxidizing solution at a temperature of 82° C. for 15 minutes; obtain a deoxidized film substrate;

[0095] Described oxidation liquid is made up of following raw material: 90g / L potassium permanganate, 13g / L sodium hydroxide and water;

[0096] (3) Neutralization

[0097] Soak the deoxidized film substrate obtained in step (2) in a neutralizing solution at a temperatu...

technical field

[0001] The invention belongs to the technical field of high-temperature co-fired ceramics, and specifically relates to a secondary metallization process of high-temperature co-fired ceramics. Background technique

[0002] With the development and automation of industries such as communications, aerospace, automobiles, and consumer electronics, the requirements for the size, function, and stability of electronic circuits and devices used are getting higher and higher. In order to meet the requirements of miniaturization, digitalization, high reliability, low power consumption of electronic circuits and devices, and the localization of key electronic components, multi-layer high temperature co-fired ceramic technology, because of its high structural strength, good chemical stability, With the advantages of excellent electrothermal performance, high wiring density, and low cost, it has developed rapidly in recent years.

[0003] The sintering temperature of the...

Examples

Embodiment 1

[0045] A secondary metallization process for high-temperature co-fired ceramics, comprising the following steps:

[0046] (1) Degreasing

[0047] The primary metallized substrate after high-temperature sintering of alumina ceramic substrate and tungsten paste is ultrasonically soaked in a degreasing solution at a temperature of 50°C for 5 minutes, taken out and rinsed with water to obtain a degreasing substrate;

[0048] The degreasing liquid is composed of the following raw materials: 40g / L degreasing powder and water;

[0049] (2) Deoxidation

[0050] Soak the degreasing substrate obtained in step (1) in an oxidizing solution at a temperature of 80° C. for 20 minutes; obtain a deoxidized film substrate;

[0051] Described oxidation liquid is made up of following raw material: 85g / L potassium permanganate, 8g / L sodium hydroxide and water;

[0052] (3) Neutralization

[0053] Soak the deoxidized film substrate obtained in step (2) in a neutralizing solution at a temperatur...

Embodiment 2

[0067] A secondary metallization process for high-temperature co-fired ceramics, comprising the following steps:

[0068] (1) Degreasing

[0069] The primary metallized substrate after high-temperature sintering of alumina ceramic substrate and tungsten paste is ultrasonically soaked in a degreasing solution at a temperature of 60°C for 3 minutes, taken out and rinsed with water to obtain a degreasing substrate;

[0070] The degreasing liquid is composed of the following raw materials: 60g / L degreasing powder and water;

[0071] (2) Deoxidation

[0072] Soak the degreasing substrate obtained in step (1) in an oxidizing solution at a temperature of 85° C. for 10 minutes; obtain a deoxidized film substrate;

[0073] Described oxidation liquid is made up of following raw material: 95g / L potassium permanganate, 18g / L sodium hydroxide and water;

[0074] (3) Neutralization

[0075] Soak the deoxidized film substrate obtained in step (2) in a neutralizing solution at a temperatu...

Embodiment 3

[0089] A secondary metallization process for high-temperature co-fired ceramics, comprising the following steps:

[0090] (1) Degreasing

[0091] The primary metallized substrate after high-temperature sintering of alumina ceramic substrate and tungsten paste is ultrasonically soaked in a degreasing solution at a temperature of 55°C for 4 minutes, taken out and rinsed with water to obtain a degreasing substrate;

[0092] The degreasing liquid is composed of the following raw materials: 50g / L degreasing powder and water;

[0093] (2) Deoxidation

[0094] Soak the degreasing substrate obtained in step (1) in an oxidizing solution at a temperature of 82° C. for 15 minutes; obtain a deoxidized film substrate;

[0095] Described oxidation liquid is made up of following raw material: 90g / L potassium permanganate, 13g / L sodium hydroxide and water;

[0096] (3) Neutralization

[0097] Soak the deoxidized film substrate obtained in step (2) in a neutralizing solution at a temperatu...