Y-shaped gate structure based on carbon-based material, and preparation method thereof

Abstract

The invention discloses a Y-shaped gate structure based on a carbon-based material. The Y-shaped gate structure comprises a substrate of a carbon-based material channel layer, wherein an integrated gate metal structure consisting of a gate metal gate root and a gate metal gate cap is arranged on the substrate, a first high-K gate dielectric layer is arranged between the gate metal structure and the carbon-based material channel layer, the lower portion of the gate metal gate cap has a first width, the upper portion of the gate metal gate cap has a second width greater than or equal to the first width, two side surfaces are formed between the upper portion and the lower portion of the gate metal gate cap, and the side surfaces are respectively coated with a second high-K gate dielectric layer. The invention further provides a preparation method of the Y-shaped gate structure, wherein the self-aligned Y-shaped gate structure can be formed only through one-time exposure, so that the process is simple, and operation is convenient. According to the Y-shaped gate structure based on the carbon-based material, the parasitic effect is further reduced while the gate resistance is reduced, and the performance of a carbon-based high-speed and high-frequency device can be improved.

Description

technical field [0001] The invention relates to the technical field of transistor electronic device preparation, in particular to a carbon-based material-based Y-shaped gate structure and a preparation method thereof. Background technique [0002] Carbon-based electronic materials represented by three-dimensional material diamond, two-dimensional material graphene and quasi-one-dimensional material carbon nanotubes have ultra-wide bandgap, ultra-high carrier mobility, excellent thermal conductivity and mechanical properties, respectively. As well as the various quantum effects brought by the unique low-dimensional structure, it has great potential in the fields of radio frequency high-power, high-linearity, terahertz and photoelectric mixing devices. With the development of carbon-based radio frequency devices, the existing experimental results show that the performance of carbon-based radio frequency devices is still lagging behind theoretical expectations due to limitation...

AI Technical Summary

Problems solved by technology

T-gate devices have two structures, one is the gate-first self-aligned structure, its disadvantage is that the length of the channel defined by the self-aligned source-drain electrodes depends on the length of the gate cap, so in a long gate cap (larger Under the design of gate cap cross-sectional area and smaller gate resistance), short-channel transistors cannot be fabricated, and short channels are necessary for RF devices

The second is the gate-last non-self-aligned structure. Through two exposures, the complexity of the process is increased. Although the former problem can be solved, the distance between the source-drain electrode and the gate is reduced, thereby increasing the device size. Parasitic effects, which are detrimental to the high frequency performance of the device

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