Method for improving growth quality of silicon carbide epitaxial film

A technology of epitaxial thin film and silicon carbide, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of silicon carbide epitaxial thin film with many defects and the reduction of thin film defects, achieve good application prospects, reduce crystal defects, and can highly operable effect

Active Publication Date: 2021-03-12
EPIWORLD INT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to overcome the problem that there are many defects in the growth of existing silicon carbide epitaxial films, and to provide a method for improving the growth quality of silicon carbide epitaxial films. The process control of multiple buffer layers in the buffer stage makes the crystal form of silicon carbide in the initial growth stage tend to be perfect, and the film defects obtained by epitaxial growth on this basis are significantly reduced

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  • Method for improving growth quality of silicon carbide epitaxial film
  • Method for improving growth quality of silicon carbide epitaxial film
  • Method for improving growth quality of silicon carbide epitaxial film

Examples

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Embodiment 1

[0045] A method for improving the quality of silicon carbide epitaxial film growth, comprising the following steps:

[0046] Step 1: Select a silicon carbide substrate with a silicon surface that is 4° to the direction, perform standard cleaning and place the substrate on a small plate in the reaction chamber;

[0047] Step 2: Evacuate the reaction chamber to a vacuum, then inject hydrogen, keep the flow rate of hydrogen at 150L / min, and the pressure of the reaction chamber at 100mbar. Use radio frequency heating to heat the reaction chamber at a fixed rate of 34°C / min. The room temperature is raised to 1300°C; then the heating rate is reduced to 16°C / min, and the temperature is raised to 1625°C etching temperature. The small disk air flotation uses a certain proportion of hydrogen-argon mixed gas, the volume ratio of hydrogen and argon in the hydrogen-argon mixed gas 1:1, the air flotation flow rate of the small plate is 100sccm, and the constant temperature is etched for 15...

Embodiment 2

[0054] A method for improving the quality of silicon carbide epitaxial film growth, comprising the following steps:

[0055] Step 1: Select a silicon carbide substrate with a silicon surface that is 4° to the direction, perform standard cleaning and place the substrate on a small plate in the reaction chamber;

[0056] Step 2: Evacuate the reaction chamber to a vacuum, then inject hydrogen gas, keep the flow rate of hydrogen gas at 200L / min, and the pressure of the reaction chamber at 150mbar. Use radio frequency heating to heat the reaction chamber at a fixed rate of 30°C / min. The room temperature is raised to 1300°C; then the heating rate is reduced to 20°C / min, and the temperature is raised to 1675°C etching temperature. The small disk air flotation uses a certain proportion of hydrogen-argon mixed gas, the volume ratio of hydrogen and argon in the hydrogen-argon mixed gas The ratio is 3:7, the air flotation flow rate of the small plate is 600sccm, and the constant tempera...

Embodiment 3

[0062] A method for improving the quality of silicon carbide epitaxial film growth, comprising the following steps:

[0063] Step 1: Select a silicon carbide substrate with a silicon surface that is 4° to the direction, perform standard cleaning and place the substrate on a small plate in the reaction chamber;

[0064] Step 2: Evacuate the reaction chamber to a vacuum, then inject hydrogen, keep the flow rate of hydrogen at 180L / min, and the pressure of the reaction chamber at 120mbar, use radio frequency heating, with a fixed heating rate of 40°C / min, the reaction chamber is heated by The room temperature is raised to 1350°C; then the heating rate is reduced to 20°C / min, and the temperature is raised to 1655°C etching temperature. The small disk air flotation uses a certain proportion of hydrogen-argon mixed gas, the volume ratio of hydrogen and argon in the hydrogen-argon mixed gas 3:7, the air flotation flow rate of the small plate is 500sccm, and the etching is carried ou...

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Abstract

The invention relates to a method for improving the growth quality of a silicon carbide epitaxial film. The method comprises the following steps: cleaning a substrate and placing the substrate on a small disc in a reaction chamber; vacuumizing the reaction chamber, then introducing hydrogen, and carrying out constant-temperature etching; changing the pressure and temperature of the reaction chambewithin 20-100 s in a linear slow change mode, meanwhile, introducing a carbon source and a silicon source a, and gradually changing the C/Si molar ratio from 0 to 0.80-1.10; changing the carbon sourceflow and the silicon source flow within 20-100 s in a linear gradual change mode, and keeping the C/Si molar ratio unchanged; and changing the temperature, the pressure, the carbon source flow and the silicon source flow to target conditions within 20-100s by adopting a linear gradual change mode, and carrying out epitaxial film growth until the target thickness and the like are reached. By adopting the method for improving the growth quality of the silicon carbide epitaxial thin film, the crystal defects of the epitaxial thin film of the epitaxial thin film can be remarkably reduced, the process control is simple, the operability is high, and the application prospect is better.

Description

technical field [0001] The invention relates to a silicon carbide preparation technology, in particular to a method for improving the growth quality of a silicon carbide epitaxial film. Background technique [0002] In recent years, silicon carbide (SiC) epitaxial materials and devices are growing steadily and rapidly, and in some fields it is gradually replacing traditional silicon and gallium arsenide materials. Silicon carbide has better material properties than silicon and gallium arsenide. For example 4H-SiC, which has approximately 4×10 6 The breakdown field strength of V / cm, about 2×10 7 cm / s electron drift velocity and about 4.9W / cm·K thermal conductivity, while having high chemical stability and radiation resistance. These excellent material properties make silicon carbide particularly suitable for high power, high temperature and high frequency applications. [0003] Most of the device fabrication is realized on epitaxial films, therefore, the performance of si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/04
CPCH01L21/02378H01L21/02529H01L21/0262H01L21/0445
Inventor 刘杰冯淦赵建辉
Owner EPIWORLD INT
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