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V4+ self-doped V2O5 nano wire as well as preparation method and application thereof

A V2O5, self-doping technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., to achieve excellent rate performance and cycle stability, low cost, and mild conditions

Pending Publication Date: 2021-03-16
BEIFANG UNIV OF NATITIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the present invention provides a V 4+ Self-doping V 2 o 5 Nanowire and its preparation method and application

Method used

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  • V4+ self-doped V2O5 nano wire as well as preparation method and application thereof
  • V4+ self-doped V2O5 nano wire as well as preparation method and application thereof
  • V4+ self-doped V2O5 nano wire as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment provides a V 4+ Self-doping V 2 o 5 A method for preparing nanowires, comprising the steps of:

[0035] 1) Add 1g V in 70ml deionized water 2 o 5 powder, the above solution was poured into a 100ml beaker and placed on a magnetic stirrer to stir for 6 hours. Then 0.1 ml of ethylenediamine was added and stirring was continued for 6 hours.

[0036] 2) The solution in step 1) was transferred to a 100ml hydrothermal reaction kettle, and the reaction kettle was placed in an oven at 180° C. for hydrothermal reaction for 48 hours.

[0037] 3) After the hydrothermal reaction, the sample is taken out, washed with deionized water, and dried. Put the dried sample into a muffle furnace and anneal at 400°C for 60 minutes in the muffle furnace to obtain V 4+ Self-doping V 2 o 5 Nanowires.

[0038] Experimental results: V prepared in this example 2 o 5 XRD characterization of nanowires as figure 1 As shown, it can be seen that there are two strong diffracti...

Embodiment 2

[0041] This embodiment provides a V 4+ Self-doping V 2 o 5 A method for preparing nanowires, comprising the steps of:

[0042] 1) Add 1g V in 70ml deionized water 2 o 5 powder, the above solution was poured into a 100ml beaker and placed on a magnetic stirrer to stir for 10 hours. Then 0.15 ml of ethylenediamine was added and stirring was continued for 8 hours.

[0043] 2) The solution in step 1) was transferred to a 100ml hydrothermal reaction kettle, and the reaction kettle was placed in an oven at 182° C. for hydrothermal reaction for 48 hours.

[0044] 3) After the hydrothermal reaction, the sample is taken out, washed with deionized water, and dried. The dried samples were placed in a muffle furnace and annealed at 402°C for 55 minutes in the muffle furnace.

[0045] According to the method of Example 1, the V of this example will be 4+ Self-doping V 2 o 5 The nanowires were assembled into a 2025-type button battery, and the electrochemical performance was teste...

Embodiment 3

[0047] This embodiment provides a V 4+ Self-doping V 2 o 5 A method for preparing nanowires, comprising the steps of:

[0048] 1) Add 1g V in 70ml deionized water 2 o 5 powder, the above solution was poured into a 100ml beaker and placed on a magnetic stirrer to stir for 8 hours. Then 0.2 ml of ethylenediamine was added and stirring was continued for 8 hours.

[0049] 2) The solution in step 1) was transferred to a 100ml hydrothermal reaction kettle, and the reaction kettle was placed in an oven at 185° C. for 72 hours of hydrothermal reaction.

[0050] 3) After the hydrothermal reaction, the sample is taken out, washed with deionized water, and dried. Put the dried sample into a muffle furnace and anneal at 405°C for 50 minutes in the muffle furnace to obtain V 4+ Self-doping V 2 o 5 Nanowires.

[0051] According to the method of Example 1, the V of this example will be 4+ Self-doping V 2 o 5 The nanowires were assembled into a 2025-type button battery, and the e...

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Abstract

The invention discloses a V4+ self-doped V2O5 nano wire as well as a preparation method and application thereof. The preparation method of the V2O5 nano wire comprises the following steps: carrying out hydrothermal reaction on V2O5 powder and ethylene diamine in a deionized water system; and carrying out annealing treatment on the hydrothermal reaction product. The invention also provides a lithium ion battery positive plate, which comprises the V4+ self-doped V2O5 nano wire. The invention provides a lithium ion battery which comprises the positive plate. The V2O5 nano wire provided by the invention has a high length-diameter ratio, can give full play to the advantages of a one-dimensional nano material, and has excellent rate capability and cycling stability. Besides, the raw materials ofthe method for preparing the V2O5 nano wire are easy to obtain, the V2O5 nano wire can be obtained through a hydrothermal method and annealing treatment, the process is simple, the conditions are mild, and the cost is low.

Description

technical field [0001] The invention belongs to the technical field of lithium-ion battery cathode materials, in particular to a V 4+ Self-doping V 2 o 5 Nanowires and their preparation methods and applications. Background technique [0002] V 2 o 5 Due to its cheap price, abundant resources, high specific capacity, and high energy density, it has attracted extensive attention from researchers. When intercalating / extracting two lithium ions, V 2 o 5 The theoretical specific capacity is 294 mAhg -1 , much higher than LiFePO 4 (170mAhg -1 ) and LiCoO 2 (140mAhg -1 ) and other common cathode materials for lithium-ion batteries. However, V 2 o 5 The intrinsic conductivity of the cathode material (10 -2 -10 -3 Scm -1 ) and low lithium ion diffusion coefficient (10 -12 -10 -15 cm 2 the s -1 ), resulting in poor rate performance. In addition, repeated phase transitions of Li-ion intercalation / extraction lead to V 2 o 5 The structural stability of the str...

Claims

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Application Information

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IPC IPC(8): C01G31/02H01M4/131H01M10/0525H01M4/48B82Y30/00B82Y40/00
CPCC01G31/02H01M4/483H01M4/131H01M10/0525B82Y30/00B82Y40/00H01M2004/021H01M2004/028C01P2004/16C01P2002/72C01P2004/03C01P2002/85C01P2006/40Y02E60/10
Inventor 吴建栋卢辉贾廷庆范瑞娟晁锋刚杨少林王北平马金福盛之林
Owner BEIFANG UNIV OF NATITIES
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