Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for low particle plasma etching

A plasma and etching technology, applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc.

Pending Publication Date: 2021-03-19
OERLIKON ADVANCED TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sticking is often seen as "resetting" the chamber to defined wall conditions, however after a certain time shield replacement is usually required

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for low particle plasma etching
  • Method and apparatus for low particle plasma etching
  • Method and apparatus for low particle plasma etching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0072] The etching of wafer blanks as well as of wafers coated with TCO, e.g. ITO, has been carried out on a Clusterline CLN300E multi-chamber system from Evatec AG equipped with an ICP etch module 1 modified according to the invention, which is only available on figure 1 is schematically shown in . In the etching compartment 31 delimited by the electrode shields (12, 13, 13', 13") of the second electrode 12 and the third electrode 13, the wafer 27 is placed on the susceptor 11, which constitutes the first electrodes, the first electrode is connected to a radio frequency source 8, typically 13.56 MHz, and defines the etch compartment 31 in the lower central region. The base is equipped with an ESC 14 for better thermal coupling of the wafer 27. The base 11 also There is an internal liquid circuit 35 which is connected to the first heating / cooling system 16 via the first heating / cooling line 16' to temper or cool the substrate. The window of the infrared temperature measuremen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A plasma etching device comprising a vacuum chamber (2) for at least one plate shaped substrate with side walls (18, 18') looping around a central axis (A), the chamber including a substrate handlingopening (28); at least one inlet (34) for a reductive gas and an inert gas; a pedestal (11, 11') formed as a substrate support in a central lower area of an etching compartment (31) of the chamber (2), the pedestal (11) being mounted in the chamber (2) in an electrically isolated manner and connected to a first pole of a first voltage source (8), thereby forming a first electrode (11, 11'), the pedestal encompassing first heating and cooling means (16, 16'); a second electrode (12, 12') electrically connected to ground and surrounding the first electrode (11, 11'); a third electrode (13) electrically connected to ground comprising at least one upper shield (13') and a screen-shield (13") both being thermally and electrically connected to each other, whereby the screen-shield (13") loops around the etching compartment (31); - whereby at least one of the upper shield (13') and the screen shield (13") comprises at least one further heating and / or cooling means (17, 17') the device (1) further comprising a vacuum pump system (4) and an inductive coil (9) looping around at least an upper sidewall (18) defining the sidewall of the etching compartment (31 ), whereby one first end (9') ofthe coil (9) is connected to a first pole of a second voltage- source (10) and one second end (9") of the coil is connected to ground.

Description

technical field [0001] The present invention relates to a plasma etching apparatus according to claim 1 and to a process of plasma etching a semiconductor substrate in such a plasma etching apparatus according to claim 20 . Background technique [0002] Definitions and Measuring Instruments [0003] AMOLED Active Matrix Organic Light Emitting Diode [0004] CCDs charge coupled device sensor [0005] CH 4 methane gas [0006] CTE coefficient of thermal expansion [0007] ESC Electrostatic Chuck [0008] ICP Inductively Coupled Plasma [0009] ITO indium tin oxide (ln x sn y o z ) [0010] LCD liquid crystal display [0011] LED light emitting diode [0012] RIE reactive ion etching [0013] TCO Transparent Conductive Oxide such as ITO or Zinc Oxide (ZnO). [0014] In order to perform Langmuir measurements to systematically optimize certain plasma parameters such as ion and electron density (N e and N i 、[cm -3 ]), floating and plasma potentials (V f and V p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/3065
CPCH01J37/321H01J37/32642H01J37/32651H01J37/32522H01J37/32724H01J37/32568H01J37/32715H01J2237/2001H01J2237/2007H01J2237/20235H01J2237/334H01L21/32136
Inventor J·维查尔特B·柯蒂斯F·巴隆
Owner OERLIKON ADVANCED TECH