Electrical isolation structure and method of making the same

Abstract

The invention relates to an electrical isolation structure and a preparation method thereof. A high-absorption structure is prepared in the light-absorbing region of the optical device, and the electrode nano-forest of the electrically isolated structure surrounds the device electrode, and a discontinuous electrode nano-forest metal layer is arranged on the electrode nano-forest; the electrode nano-forest has a large aspect ratio, and metal sputtering Or the incomplete shape retention of the evaporation process, the sidewall of the electrode nano forest cannot be completely covered, and the thin metal layer cannot form a continuous film, that is, a discontinuous electrode nano forest metal layer can be prepared on the electrode nano forest. Since the prepared electrode nano-forest itself is not conductive, the electrode nano-forest covered with the discontinuous electrode nano-forest metal layer still has insulation, so that the electrical isolation between device electrodes can be effectively realized, and it is compatible with existing processes. Safe and reliable.

Description

technical field [0001] The invention relates to a structure and a preparation method thereof, in particular to an electrical isolation structure and a preparation method thereof. Background technique [0002] When the nanostructure has a large aspect ratio, after depositing a thin metal layer with a large extinction coefficient on the surface of the nanostructure, due to the large aspect ratio of the nanostructure, the nanostructure covered with the thin metal layer has a light trapping effect , when the metal thin layer is a specific noble metal, it even has surface plasmon properties. Therefore, the whole structure has broad spectrum and high absorption characteristics, and can be applied to MEMS optical devices, specific applications include solar cells, infrared sensors, etc. . [0003] For this type of MEMS optical device, after integrating a broad-spectrum high-absorption structure on its surface, due to the particularity of the nanostructure, it can no longer withsta...

AI Technical Summary

Problems solved by technology

This type of MEMS optical device generally has two metal electrodes, which can be used for the output of electrical signals. Once the surface of the metal electrodes is also covered with nanostructures, it will directly affect the metal leads when the device is packaged. , so that the device cannot be packaged smoothly; on the other hand, if the nanostructure is only integrated in the light-absorbing region, the two electrodes are easily connected due to the deposition and coverage of a thin metal layer, causing the device to short-circuit and fail to work.

[0004] The process methods for patterning one-dimensional nanostructures include electron beam lithography, ion beam etching, femtosecond laser and other methods. These methods are serial processes, which are time-consuming and highly dependent on cutting-edge equipment, which is not conducive to batch production.

However, the method of combining chemical synthesis and vapor phase growth has the problem of process compatibility, and cannot be used in the preparation of nanostructures in the CMOS-MEMS process.

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