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Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof

An oxide semiconductor and lateral double-diffusion technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of BVoff reduction, increase the number of photolithography layers, and affect manufacturing costs, so as to reduce BVoff and reduce Effect of on-resistance

Active Publication Date: 2021-03-30
CSMC TECH FAB2 CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But this needs to increase the number of photolithography layers, which affects the manufacturing cost; or reduce the turn-on resistance Rdson by adjusting the resistance of the drift region, but it will inevitably lead to a decrease in BV off

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  • Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof
  • Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof
  • Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof

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Embodiment Construction

[0044] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0045] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and like reference numerals designate like elements throughout.

[0046] It will be understood that when an element or layer is referr...

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Abstract

The invention provides a lateral double-diffused metal oxide semiconductor device and a manufacturing method thereof. The lateral double-diffused metal oxide semiconductor device includes: a semiconductor substrate; a drift region which is formed in the semiconductor substrate; a gate structure which is formed on the drift region; a source region and a drain region which are positioned in the semiconductor substrate at two ends of the gate structure; a self-aligned silicide barrier layer, wherein an opening is formed in the self-aligned silicide barrier layer, and the opening exposes at leasta part of the drain region; a source region contact which is positioned above the source region and is electrically connected with the source region; a drain region contact, wherein the bottom end part of the drain region contact is embedded into the opening and is in direct contact with the side wall of the opening, and the drain region contact is electrically connected with the drain region; anda metal silicide layer which is formed between the source region and the source region contact and between the drain region and the drain region contact. Through the arrangement of the invention, theconduction resistance can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a lateral double-diffused metal oxide semiconductor device and a manufacturing method thereof. Background technique [0002] In the development of high-voltage MOS transistors, there are mainly two types: vertical double-diffused metal-oxide semiconductor (VDMOS) and lateral double-diffused metal-oxide semiconductor (LDMOS). Although vertical double-diffused metal-oxide semiconductor (VDMOS) has a small on-resistance and occupies a small layout area, it is a vertical structure and is not easy to be compatible with low-voltage CMOS circuits. The lateral double diffused metal oxide semiconductor (LDMOS) has better thermal stability and frequency stability, higher gain and durability, lower feedback capacitance and thermal resistance, and constant input impedance and simpler bias current Circuits, therefore, have been widely used at present. [0003] At present, the product...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L21/336H01L29/78
CPCH01L29/0684H01L29/7802H01L29/66712H01L29/78H01L29/06H01L21/28H01L29/66681
Inventor 金宏峰陈淑娴黄宇曹瑞彬金华俊
Owner CSMC TECH FAB2 CO LTD
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