Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of multilayer dielectric film rectangular diffraction grating with high damage threshold

A technology with high damage threshold and multi-layer media, applied in the direction of diffraction grating, optomechanical equipment, photoplate process of patterned surface, etc., can solve the problems of difficult preparation, achieve low cost, increase damage threshold, and avoid absorption defects Effect

Active Publication Date: 2021-04-02
TONGJI UNIV
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a high damage threshold multi-layer dielectric film rectangular diffraction grating preparation method to overcome the difficulties and shortcomings of the traditional grating preparation method for the preparation of rectangular gratings with high damage thresholds, which can reduce the shape deviation caused by the rectangular structure of the grating. The electric field is enhanced, and the absorption defect caused by the bombardment of the ion beam on the side wall of the dielectric grating (where the electric field enhancement peak is located) in the traditional process is avoided, thereby improving the damage threshold of the multilayer dielectric film diffraction grating

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of multilayer dielectric film rectangular diffraction grating with high damage threshold
  • Preparation method of multilayer dielectric film rectangular diffraction grating with high damage threshold
  • Preparation method of multilayer dielectric film rectangular diffraction grating with high damage threshold

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. This embodiment is carried out on the premise of the technical solution of the present invention, and detailed implementation and specific operation process are given, but the protection scope of the present invention is not limited to the following embodiments.

[0041] Such as Figure 7 As shown, this embodiment provides a method for preparing a multilayer dielectric rectangular diffraction grating with a high damage threshold. The multilayer dielectric rectangular diffraction grating to be prepared includes a substrate, a dielectric multilayer film, and a grating structure. The preparation method includes The following steps:

[0042] S1. Plating multi-layer dielectric film.

[0043] The multi-layer dielectric film 2 is plated on the clean substrate by ion beam assisted electron beam evaporation coating method. The multilayer film is char...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of a multilayer dielectric film rectangular diffraction grating with a high damage threshold. The preparation method comprises the following steps: plating a multilayer dielectric film; etching on the Si wafer to prepare a rectangular Si grating mother set with a structure opposite to that of the target rectangular grating; transferring the pattern ofthe rectangular Si grating mother set by using a soft material template; forming a photoresist grating with a structure opposite to that of the target rectangular grating on the multilayer dielectricfilm through a soft material template by using an ultraviolet nano soft imprinting technology; depositing a film forming a grating on the photoresist grating by using an atomic layer deposition process; and removing the redundant thin film and the photoresist to form a required rectangular grating structure. Compared with the prior art, the method has the advantages that a trapezoidal grating structure caused by a traditional grating etching process is overcome, the problem that the electric field enhancement effect in the grating is intensified due to trapezoidal grating structure deviation is solved, the absorption defect caused by ion beam bombardment on the side wall of the dielectric grating in the etching process is avoided, and the laser damage threshold of the dielectric multilayerfilm diffraction grating is improved.

Description

technical field [0001] The invention belongs to the field of manufacturing micro-nano optical devices, and relates to a method for preparing a grating, in particular to a method for preparing a multilayer dielectric film rectangular diffraction grating with a high damage threshold. Background technique [0002] The development of ultra-intense and ultra-short pulse lasers based on chirped pulse amplification technology provides a basis for the study of matter interaction under extreme physical conditions, which can promote the development and transformation of life sciences, nuclear physics, high-energy physics, and astrophysics. . Diffraction grating is the core component of chirped pulse amplification technology. At present, compared with traditional metal diffraction grating, dielectric multilayer film diffraction grating makes up for the disadvantages of metal materials in absorbing and resisting laser damage, and gradually occupies an important position in high-energy l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B5/18G03F7/00
CPCG02B5/1857G03F7/0002
Inventor 程鑫彬谢凌云张占一王占山
Owner TONGJI UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More