Low-capacitance curved surface piezoresistor and manufacturing method thereof

Abstract

The invention discloses a low-capacitance curved surface piezoresistor and a manufacturing method thereof. The low-capacitance curved surface piezoresistor comprises a curved surface piezoresistor porcelain body, silver electrodes arranged on an inner arc surface and an outer arc surface of the curved surface piezoresistor porcelain body, a tin ring layer arranged at the bottom of the silver electrode with the outer arc surface, an epoxy resin encapsulation layer arranged at the other part, an extraction electrode tightly connected with the silver electrode with the inner arc surface through soldering tin, and a glass insulating layer arranged on a bottom hemisphere plane. The manufacturing method comprises the following steps: carrying out dry pressing on a spray-granulated piezoresistor ceramic powder to form a semispherical piezoresistor green body accompanied by the inner and outer arc surfaces, discharging glue, sintering to obtain a curved piezoresistor ceramic body, carrying out magnetron sputtering on the silver electrode and the tin ring layer, carrying out silk-screen printing on an insulating glass slurry, drying, tempering, welding, and encapsulating to obtain the low-capacitance curved surface piezoresistor. The piezoresistor has the advantages of a small intrinsic capacitance and less material consumption, and is suitable for large-scale industrial production.

Description

Technical field[0001]The present invention relates to a low capacitance curved surface pressure sensor and a manufacturing method thereof, belonging to the technical field of electronic components.Background technique[0002]Due to the high nonlinear characteristics, fast response time, small leakage current, high flow energy, energy absorption density, and the safety of power equipment, safeguarding the normal stability of electronic equipment, and Low cost, widely used in various fields such as aviation, aerospace, electricity, post and telecommunications, railway, automotive and household appliances. In recent years, with the continuous expansion of the varistor application field, it has been widely used in the high-frequency circuit, and it is desirable to have a small amount of capacitance in a high-frequency environment, otherwise high frequency bypass. In the prior art, the main factor affecting the static capacitance of the pressure sensitive resistor is the size of the two el...

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Problems solved by technology

In the prior art, the main factors affecting the static capacitance of the piezoresistor are the size of the two electrode plates of the piezoresistor and the thickness between the electrode plates. The existing piezoresistors are mainly disc-shaped piezoresistor chips and In the production process of multi-layer laminated varistor chips, the inherent capacitance is mainly determined by the formula material, and the production process has little influence. The thickness of the varistor determines the product model. After the model is selected, the product thickness deviation is small, and the impact on capacitance is limited.

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