Method for preparing silicon carbide tube by adopting chemical vapor deposition process

A technology of chemical vapor deposition and silicon carbide tubes, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of low density of silicon carbide tubes and easy detachment of silicon carbide tubes, and achieve improved crystallinity effect

Inactive Publication Date: 2021-04-13
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing silicon carbide tubes by using a chemical vapor deposition process to solve the problem of low density of silicon carbide tubes. The preparation process of the present invention is controllable, and the silicon carbide tubes are easy to come out

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  • Method for preparing silicon carbide tube by adopting chemical vapor deposition process
  • Method for preparing silicon carbide tube by adopting chemical vapor deposition process
  • Method for preparing silicon carbide tube by adopting chemical vapor deposition process

Examples

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Effect test

Embodiment 1

[0025] In this embodiment, the method for preparing a silicon carbide tube on a graphite tube substrate using a chemical vapor deposition process is as follows:

[0026] (1) Select a graphite tube with an outer diameter of 10 mm and an inner diameter of 6 mm (the shape of the inner hole is cylindrical) as the substrate, and ultrasonically clean the graphite tube in alcohol for 15 minutes;

[0027] (2) The graphite tube is vertically placed in the deposition chamber, and the gas system only passes through the central hole of the graphite tube during deposition;

[0028] (3) Start to deposit SiC, the liquid flow rate of hexamethyldisilane is 0.3g / min, H 2 The flow rate is 600sccm, the Ar flow rate is 4000sccm, the deposition temperature is 1100°C, the working pressure is 300Pa, the deposition time is 5h, and the obtained tube is a silicon carbide tube;

[0029] During the heating process, H was first introduced into the 2 and Ar, after the temperature rises to the deposition t...

Embodiment 2

[0033] In this embodiment, the method for preparing a silicon carbide tube on an alumina ceramic tube substrate by a chemical vapor deposition process is as follows:

[0034] (1) Select an alumina ceramic tube with an outer diameter of 12mm and an inner diameter of 6mm (the cross-sectional shape of the inner hole is trapezoidal) as the substrate, and ultrasonically clean the alumina ceramic tube in acetone for 10 minutes;

[0035] (2) The alumina ceramic tube is vertically placed in the deposition chamber, and the gas system only passes through the central hole of the alumina ceramic tube during deposition;

[0036] (3) Start to deposit SiC, the liquid flow rate of hexamethyldisilane is 0.5g / min, H 2 The flow rate is 300sccm, the Ar flow rate is 2000sccm, the deposition temperature is 1100°C, the working pressure is 600Pa, the deposition time is 5h, and the obtained tube is a silicon carbide tube;

[0037] During the heating process, H was first introduced into the 2 and Ar,...

Embodiment 3

[0040] In this embodiment, the method for preparing a silicon carbide tube on an alumina ceramic tube substrate by a chemical vapor deposition process is as follows:

[0041] (1) Select an alumina ceramic tube with an outer diameter of 12 mm and an inner diameter of 6 mm (the shape of the inner hole is a combination of a truncated cone and a cylinder) as the substrate, and ultrasonically clean the alumina ceramic tube in acetone for 5 minutes;

[0042] (2) The alumina ceramic tube is vertically placed in the deposition chamber, and the gas system only passes through the central hole of the alumina ceramic tube during deposition;

[0043] (3) Start to deposit SiC, the liquid flow rate of hexamethyldisilane is 1.2g / min, H 2 The flow rate is 900sccm, the Ar flow rate is 6000sccm, the deposition temperature is 1000°C, the working pressure is 900Pa, the deposition time is 10h, and the obtained tube is a silicon carbide tube;

[0044] During the heating process, H was first introdu...

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Abstract

The invention belongs to the technical field of ceramic tube preparation, and particularly relates to a method for preparing a silicon carbide tube by adopting a chemical vapor deposition process. A thermal excitation type chemical vapor deposition (CVD) system is adopted, an aluminum oxide ceramic tube or a graphite tube is selected as a deposition matrix, hexamethyldisilane (HMDS), H<2> and Ar are selected as a gas system, deposition is carried out under the conditions that the working pressure is 10-1000 Pa and the temperature is 650-1350 DEG C, and after the aluminum oxide ceramic tube or the graphite tube is removed, silicon carbide tubes with compact structures and different inner and outer diameters are obtained. The method is used for manufacturing heat exchanger tubes of corrosive media, abrasion-resistant water flow spray tubes, other high-temperature environment devices and the like.

Description

technical field [0001] The invention belongs to the technical field of ceramic tube preparation, and in particular relates to a method for preparing a silicon carbide tube by using a chemical vapor deposition process. Background technique [0002] Silicon carbide has the advantages of high temperature resistance, corrosion resistance, thermal shock resistance, large thermal conductivity and good oxidation resistance, so it is widely used in non-ferrous metal refining, various heat treatment furnaces, metallurgy and chemical industries, etc. Excellent mechanical properties such as high hardness and high wear resistance. Its hardness is second only to diamond and boron carbide. It can be used efficiently and stably in the environment of high-speed gas and liquid transportation. The most important thing to prepare silicon carbide tubes is to ensure their density. At present, hot pressing is generally used to prepare silicon carbide tubes, which has the disadvantages of low crys...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/01
CPCC23C16/01C23C16/26
Inventor 唐明强刘厚盛崔新宇王吉强沈艳芳熊天英
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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