Broadband transconductance enhanced low-noise amplifier

A low-noise amplifier and transconductance enhancement technology, applied in the direction of improving the amplifier to reduce the influence of noise, etc., can solve the problems of the gain and noise not meeting the design requirements and the narrow bandwidth.

Inactive Publication Date: 2021-04-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to aim at traditional g m -Boost low-noise amplifiers have the problems of narrow bandwidth, gain and noise that cannot meet the design requirements, and provide a wide-band transconductance-enhanced low-noise amplifier

Method used

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Embodiment Construction

[0026] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0027] This embodiment provides a broadband transconductance-enhanced low-noise amplifier, the circuit schematic diagram of which is shown in figure 1 Shown; mainly composed of 3 parts: by the transistor M 1 and M 2 first level of composition g m -boost amplifier, second stage g formed by transistors M3 and M4 m -boost amplifier, and the third-stage neutralization capacitor amplifier composed of transistors M5 and M6; through the best noise matching of the first two stages and the peak shift design of the third-stage neutralization capacitor amplifier, ultra-low noise and broadband design are achieved.

[0028] The circuit structure specifically includes: an input transformer, a first-stage differential amplifier, a first-stage inter-stage transformer, a second-stage differential amplifier, a second inter-stage transformer, a third-stage n...

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Abstract

The invention belongs to the technical field of communication, and provides a broadband transconductance enhanced low-noise amplifier which is used for solving the problems that an existing traditional gm-boost low-noise amplifier is narrow in bandwidth, and gain and noise cannot meet design requirements. A three-stage structure of a first-stage differential amplifier, a second-stage differential amplifier and a third-stage neutralizing capacitor amplifier is adopted, the two-stage differential amplifier is designed on the basis of a gm-boost structure, compared with a traditional gm-boost structure, the structure has the advantages that the input mode is improved, source input is changed into grid input, gain and isolation are increased, input impedance of the amplifier is changed gently, a large bandwidth can be obtained through matching, meanwhile, noise can be reduced, and ultra-low noise is achieved through the two-stage differential amplifier and optimal noise matching; moreover, the bandwidth of the low-noise amplifier is effectively expanded through the differential structure design of the two-stage differential amplifier, the input, the output and the inter-stage transformer matching, and the peak shifting design of the three-stage amplifier.

Description

technical field [0001] The invention belongs to the technical field of no-communication, and designs an amplifier in a receiver / transmitter of a millimeter-wave communication system, in particular a broadband transconductance enhanced low-noise amplifier. Background technique [0002] With the rapid development of communication technology, especially personal mobile communication, the low-end frequency of the radio spectrum has tended to be saturated. Even if a variety of technologies are used to expand the capacity of the communication system and improve the utilization rate of the spectrum, it cannot meet the needs of future communication development. Therefore, the realization of high-speed, broadband wireless communication is bound to develop new spectrum resources towards the microwave high end. Due to its short wavelength and wide frequency bandwidth, millimeter wave can effectively solve many problems faced by high-speed broadband wireless access, so it has broad appl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26
CPCH03F1/26
Inventor 康凯熊宇航吴韵秋赵晨曦刘辉华余益明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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