Method for improving bonding quality of silicon carbide seed crystals

A silicon carbide seed and bonding technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of poor bonding quality of seed crystals
CN112725892AInactive Publication Date: 2021-04-30北京汇琨新材料有限公司
5 Cites 4 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
北京汇琨新材料有限公司
Publication Date
2021-04-30
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
Patent Text Reader

Abstract

The invention provides a method for improving the bonding quality of silicon carbide seed crystals. The bonding quality of the SiC seed crystals is one of the most basic and most important influence factors influencing crystal growth, the bonding quality directly determines the quality of the crystals, and the crystals are difficult to remedy or improve through control of other technological parameters. A weight is added on the upper surface of the seed crystals, and the weight applies a vertically downward acting force so that gas escape is facilitated. A fixed ring is designed to ensure that the seed crystals do not deviate. The fixed ring is made of high-purity graphite so that pollution of other materials is reduced. The height of the fixed ring is 20-50 mm, and the thickness of the fixed ring is 5-10 mm. In order to reduce the temperature gradient and improve the uniformity of seed crystal bonding, a circle of high-purity graphite felt wraps the periphery of the fixed ring, and the height of the high-purity graphite felt is the same as that of the fixed ring. The graphite felt reduces the pollution to the graphite cover and the seed crystals, enhances the heat preservation property, and reduces the temperature gradient inside and outside the graphite cover.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the auxiliary technical field of crystal growth, in particular to a method for improving the bonding quality of silicon carbide seed crystals. Background technique

[0002] The rapid development of traditional semiconductor materials represented by silicon and gallium arsenide has promoted the rapid development of microelectronics and optoelectronics technology. Applications in high-radiation environments are difficult to meet the growing demand. Therefore, the third-generation semiconductor materials with wide bandgap, high temperature resistance and high resistivity have become an increasingly urgent demand. Silicon carbide (SiC), as a representative of the third-generation semiconductor materials, is one of the most popular wide-bandgap semiconductor materials at present, and its excellent performance meets the new requirements of the above-mentioned device applications. As an important supplement to traditional semiconduc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More