Method for improving bonding quality of silicon carbide seed crystals

A silicon carbide seed and bonding technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of poor bonding quality of seed crystals

Inactive Publication Date: 2021-04-30
北京汇琨新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The first purpose of the present invention is to solve the problem of poor bonding quality of the seed crystal in the prior art, but the processing method of the present application is different from that of the prior art, and the prior art generall

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  • Method for improving bonding quality of silicon carbide seed crystals
  • Method for improving bonding quality of silicon carbide seed crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A silicon carbide seed crystal bonding structure is characterized in that it includes the following parts: a graphite plate 1, a seed crystal 2, a weight 3, a fixing ring 4, and a thermal insulation felt 5.

[0030] Graphite plate 1 is in the shape of a "convex" in cross-section, with a base 11 and a protrusion 12, the cross-sectional area of ​​the protrusion 12 is smaller than that of the base 11, and the outside of the protrusion 12 is the shoulder 111 of the base 11; the horizontal surface of the protrusion 12 is bonded Surface 121.

[0031] The seed crystal 2 is a layer bonded on the bonding surface 121 .

[0032] The cross section of the weight 4 is the same as that of the protrusion 12 and is cylindrical, and is located above the seed crystal 2 .

[0033] The fixed ring 4 is a hollow cylinder made of high-purity graphite, and the hollow part thereof fits with the weight 4 and the convex part 12 .

[0034] The thermal insulation felt 5 is one or more layers of gr...

Embodiment 2

[0037] A silicon carbide seed crystal bonding structure is characterized in that it includes the following parts: a graphite plate 1, a seed crystal 2, a weight 3, a fixing ring 4, and a thermal insulation felt 5.

[0038] Graphite plate 1 is in the shape of a "convex" in cross-section, with a base 11 and a protrusion 12, the cross-sectional area of ​​the protrusion 12 is smaller than that of the base 11, and the outside of the protrusion 12 is the shoulder 111 of the base 11; the horizontal surface of the protrusion 12 is bonded Surface 121.

[0039] The seed crystal 2 is a layer bonded on the bonding surface 121 .

[0040] The cross section of the weight 4 is the same as that of the protrusion 12 and is cylindrical, and is located above the seed crystal 2 .

[0041] The fixed ring 4 is a hollow cylinder made of high-purity graphite, and the hollow part thereof fits with the weight 4 and the convex part 12 .

[0042] The thermal insulation felt 5 is one or more layers of grap...

Embodiment 3

[0045] A silicon carbide seed crystal bonding structure is characterized in that it includes the following parts: a graphite plate 1, a seed crystal 2, a weight 3, a fixing ring 4, and a thermal insulation felt 5.

[0046] Graphite plate 1 is in the shape of a "convex" in cross-section, with a base 11 and a protrusion 12, the cross-sectional area of ​​the protrusion 12 is smaller than that of the base 11, and the outside of the protrusion 12 is the shoulder 111 of the base 11; the horizontal surface of the protrusion 12 is bonded Surface 121.

[0047] The seed crystal 2 is a layer bonded on the bonding surface 121 .

[0048] The cross section of the weight 4 is the same as that of the protrusion 12 and is cylindrical, and is located above the seed crystal 2 .

[0049] The fixed ring 4 is a hollow cylinder made of high-purity graphite, and the hollow part thereof fits with the weight 4 and the convex part 12 .

[0050] The thermal insulation felt 5 is one or more layers of gr...

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Abstract

The invention provides a method for improving the bonding quality of silicon carbide seed crystals. The bonding quality of the SiC seed crystals is one of the most basic and most important influence factors influencing crystal growth, the bonding quality directly determines the quality of the crystals, and the crystals are difficult to remedy or improve through control of other technological parameters. A weight is added on the upper surface of the seed crystals, and the weight applies a vertically downward acting force so that gas escape is facilitated. A fixed ring is designed to ensure that the seed crystals do not deviate. The fixed ring is made of high-purity graphite so that pollution of other materials is reduced. The height of the fixed ring is 20-50 mm, and the thickness of the fixed ring is 5-10 mm. In order to reduce the temperature gradient and improve the uniformity of seed crystal bonding, a circle of high-purity graphite felt wraps the periphery of the fixed ring, and the height of the high-purity graphite felt is the same as that of the fixed ring. The graphite felt reduces the pollution to the graphite cover and the seed crystals, enhances the heat preservation property, and reduces the temperature gradient inside and outside the graphite cover.

Description

technical field [0001] The invention relates to the auxiliary technical field of crystal growth, in particular to a method for improving the bonding quality of silicon carbide seed crystals. Background technique [0002] The rapid development of traditional semiconductor materials represented by silicon and gallium arsenide has promoted the rapid development of microelectronics and optoelectronics technology. Applications in high-radiation environments are difficult to meet the growing demand. Therefore, the third-generation semiconductor materials with wide bandgap, high temperature resistance and high resistivity have become an increasingly urgent demand. Silicon carbide (SiC), as a representative of the third-generation semiconductor materials, is one of the most popular wide-bandgap semiconductor materials at present, and its excellent performance meets the new requirements of the above-mentioned device applications. As an important supplement to traditional semiconduc...

Claims

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Application Information

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IPC IPC(8): C30B29/36C30B33/06C30B23/00
CPCC30B29/36C30B33/06C30B23/00
Inventor 王增泽鲍慧强赵子强赵然李龙远葛明明
Owner 北京汇琨新材料有限公司
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