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Semiconductor vertical schottky diode and method of manufacturing thereof

A technology of Schottky diodes and semiconductors, applied in the field of manufacturing technology, can solve problems such as limiting the area efficiency of Schottky diodes 200

Pending Publication Date: 2021-04-30
LFOUNDRY SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, again there is an optimum value for the length La, limiting the area efficiency of the Schottky diode 200

Method used

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  • Semiconductor vertical schottky diode and method of manufacturing thereof
  • Semiconductor vertical schottky diode and method of manufacturing thereof
  • Semiconductor vertical schottky diode and method of manufacturing thereof

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Embodiment Construction

[0028] As will be discussed in detail below, one aspect of the present solution contemplates forming the ohmic metal (cathode) contact of the Schottky diode on the thinned backside of the substrate, which is identical to that established on the frontside of the same substrate. The Schottky (anode) contact is the opposite. The Schottky and Ohmic contacts have approximately the same dimensions in the horizontal plane and are separated in the vertical direction by the lightly doped substrate in between. Schottky contacts are formed on the front side by standard CMOS processes. Through silicon via (TSV) structures that laterally surround the Schottky diode, electrical contacts on the thinned back side can be used for wiring (conductive interconnect) on the front side, thus also providing full protection of the Schottky diode. Dielectric insulation.

[0029] image 3A vertical integrated high voltage Schottky diode 300 fabricated in standard CMOS technology according to a first ...

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PUM

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Abstract

A semiconductor vertical Schottky diode device (300; 400; 500; 600; 700) has: a substrate (101) of semiconductor material, with a front surface (101a) and a back surface (101b'); a lightly doped region (102) formed in a surface portion of the substrate (101) facing the front surface (101a), having a first conductivity type; a first electrode (111) formed on the lightly doped region (102) on the front surface (101a) of the substrate (101), to establish a Schottky contact; a highly doped region (140) at the back surface (101b') of the substrate (101), in contact with the lightly doped region (102) and having the first conductivity type; and a second electrode (160a) electrically in contact with the highly doped region (140), on the back surface (101b') of the substrate (101), to establish an Ohmic contact.

Description

technical field [0001] The present solution relates to a vertical semiconductor Schottky diode, and a corresponding fabrication process; in particular, the following disclosure will relate to a vertical semiconductor Schottky diode fabricated in complementary metal oxide semiconductor (CMOS) technology. Background technique [0002] As we all know, Schottky diodes are mainly used as switching elements or rectifying elements, and use a metal-semiconductor junction that has excellent high-speed switching characteristics compared with ordinary PN junction diodes. This is because, unlike p-n junction diodes, when a forward voltage is applied to a Schottky diode, minority carrier injection does not occur; in Schottky diodes, current flows only through majority carriers. [0003] Semiconductor Schottky diodes are widely used in this field. [0004] For example, figure 1 A typical integrated high voltage Schottky diode with a lateral drift region is shown, indicated generally at ...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L27/06H01L21/329H01L29/417H01L29/06
CPCH01L27/0629H01L29/0619H01L29/417H01L29/66143H01L29/872
Inventor 卡斯滕·施密特格哈德·施皮茨尔施佩格
Owner LFOUNDRY SRL