Method for preparing two-dimensional transition metal chalcogenide in-plane heterojunction

Abstract

The invention provides a method for preparing a two-dimensional transition metal chalcogenide in-plane heterojunction. The method has the characteristic that a precursor can move in a reaction process so as to realize continuous growth of the in-plane heterojunction, and the implementation method comprises the following steps: mixing a cation oxide precursor with NaCl solid powder to form cation solid powder; putting the cation solid powder and anion precursor powder into a single-temperature-zone tubular furnace, controlling the single-temperature-zone tubular furnace to stay at evaporation temperatures corresponding to different solid powder mixtures for a certain growth time, and meanwhile, matching with a precursor to correspondingly enter or leave a growth region near a substrate, so as to finally obtain the two-dimensional transition metal chalcogenide in-plane heterojunction. Compared with a traditional one-step method and a two-step method, the in-plane heterojunction prepared through the method has the advantages that the film forming area is increased, the film forming quality is improved, the pollution rate of the junction area position is reduced, the experimental conditions and cost provided by the method are greatly reduced, and a direction is provided for industrial production of the type of materials.

Description

technical field [0001] The invention belongs to the technical field of heterojunction preparation, and in particular relates to a method for preparing a two-dimensional transition metal chalcogenide in-plane heterojunction. Background technique [0002] Compared with bulk materials, two-dimensional materials have unique advantages. Their atomically thick structures have good immunity to short channel effects, and their excellent mechanical strength makes them have the potential to be applied to flexible and wearable electronic devices. However, a single two-dimensional material cannot actually meet the needs of the development of multifunctional devices. Therefore, the idea of ​​assembling different two-dimensional materials into heterostructures emerged as the times require. [0003] Two-dimensional material heterojunctions provide many physical properties that single two-dimensional materials do not have. At present, the main research work is in the direction of van der W...

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Problems solved by technology

[0004] The traditional one-step method to prepare in-plane heterojunctions is easy to contaminate the two components to form an alloy, while the two-step method inherently causes contamination at the interface. Therefore, it is necessary to study a process-controllable one-time continuous growth in-plane A heterojunction approach is necessary, and this application arose from it

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