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Preparation method of self-supporting nanocone diamond

A diamond and nano-cone technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of high hardness and chemical inertness, inconvenience, and changing diamond morphology.

Active Publication Date: 2021-05-11
JILIN TEACHERS INST OF ENG & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the extremely high hardness and chemical inertness, it is not convenient to change the morphology of diamond by mechanical processing or wet chemical etching

Method used

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  • Preparation method of self-supporting nanocone diamond
  • Preparation method of self-supporting nanocone diamond
  • Preparation method of self-supporting nanocone diamond

Examples

Experimental program
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Effect test

Embodiment 1

[0019] Embodiment 1: the preparation of nanocone diamond film on silicon wafer substrate

[0020] A silicon wafer with a size of 1cm×1cm is selected as the growth substrate, and the silicon wafer is first cleaned to remove surface pollutants. In order to increase the nucleation density during the growth process, the growth surface was ground on sandpaper containing diamond powder for 15 to 30 minutes, and placed in alcohol containing diamond powder for ultrasonic treatment for 1 hour, and finally passed through acetone, alcohol, and deionized water. Sequentially ultrasonically cleaned for 10 min, dried with nitrogen, and placed in a CVD reaction chamber to deposit a diamond film. The main growth parameters are: the gas flow rates of hydrogen, methane, and nitrogen are 200sccm, 10sccm, and 1sccm respectively, the microwave power is 350W, the chamber pressure is 8KPa, and the growth time is 5 hours. A mixed phase of diamond and non-diamond is obtained, and the film deposition th...

Embodiment 2

[0025] Embodiment 2: the preparation of molybdenum substrate nano cone diamond film

[0026] A molybdenum sheet with a size of 1cm×1cm was selected as the growth substrate, and the molybdenum sheet was first cleaned to remove surface pollutants. In order to increase the nucleation density during the growth process, the growth surface was ground on sandpaper containing diamond powder for 15-30 minutes, and then ultrasonically treated in alcohol containing diamond powder for 2 hours, and finally ultrasonicated in acetone, alcohol, and deionized water. After cleaning and drying with nitrogen gas, put it into the CVD reaction chamber to deposit diamond film. The main growth parameters are: the gas flow rates of hydrogen, methane, and nitrogen are 200sccm, 16sccm, and 1sccm respectively, the microwave power is 350W, the cavity pressure is 8KPa, and the time is 5 hours. The mixed phase of diamond and non-diamond is grown, and the film deposition thickness is about 20μm. Turn off th...

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Abstract

The invention discloses a preparation method of self-supporting nanocone diamond, and belongs to the technical field of diamond nanostructures and preparation thereof. The preparation method comprises the following steps: firstly, introducing nitrogen for doping according to the flow ratio of CH4 to H2, growing a diamond and non-diamond mixed phase, and forming a diamond inverted cone; lowering the flow ratio of CH4 to H2 to grow a diamond phase; and removing a substrate, and performing high-temperature annealing in air to etch a non-diamond phase, thereby preparing the self-supporting nanocone diamond. According to the method, deposition growth is carried out through different flow ratios of CH4 to H2, nitrogen is introduced to facilitate growth of 100-plane crystal orientation to form an inverted cone, the high-density nanocone diamond is prepared, and the surface area of a diamond film is greatly increased; and compared with a mask method or a plasma etching method from top to bottom, the preparation method is simple in process and convenient for large-scale preparation.

Description

technical field [0001] The invention belongs to the technical field of diamond nanostructure and its preparation, and relates to a preparation method of a novel self-supporting nanocone diamond. Background technique [0002] Diamond is a functional material with excellent properties such as superhardness, high thermal conductivity, chemical inertness, and stability. Preparation of diamond nanostructures (such as nanotextures, nanowires, and porous diamonds) can be applied to research in many fields. However, due to the extremely high hardness and chemical inertness, it is not convenient to change the morphology of diamond by mechanical processing or wet chemical etching. [0003] The invention prepares a diamond film structure in which a self-supporting nano-cone is produced by using a bottom-up method combined with the diamond self-growth orientation, which greatly increases the surface area of ​​the diamond film. [0004] The prior art that is close to the present invent...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/511C23C16/56C23C16/01
CPCC23C16/274C23C16/511C23C16/56C23C16/01
Inventor 袁晓溪杨峰曾旭李楠张文颖李宏郭明冯悦姝李美萱杨璐赫
Owner JILIN TEACHERS INST OF ENG & TECH