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High-quality SiC single crystal preparation device and method

A preparation device and high-quality technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of insufficient uniform growth, poor quality of SiC single crystal, and thickness that does not meet the market demand.

Pending Publication Date: 2021-05-11
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a high-quality SiC single crystal preparation device and method, which solves the problems of poor SiC single crystal quality, uneven growth, and thickness that cannot meet market demand

Method used

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  • High-quality SiC single crystal preparation device and method
  • High-quality SiC single crystal preparation device and method
  • High-quality SiC single crystal preparation device and method

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0040] Specific implementation mode one: combine Figure 1-Figure 9 Describe this embodiment, a high-quality SiC single crystal preparation device of this embodiment, including an upper cover 1, a seed crystal 2, a lower cover 3, a crucible main body 4, a filter screen 5, an insulating body 7, a power rod 8, and a quartz tube 9 and a heating coil 10, a filter screen 5 is placed in the crucible main body 4, a lower cover 3 and an upper cover 1 are arranged on the upper part of the crucible main body 4, the lower cover 3 is located on the lower side of the upper cover 1, and the lower side of the lower cover 3 is bonded with seeds Crystal 2, the upper side of the upper cover 1 is connected to the power rod 8, the outer wall of the crucible main body 4 is covered with an insulating body 7, the crucible main body 4 is placed inside the quartz tube 9, and a heating coil 10 is installed outside the quartz tube 9;

[0041] Four lower sliders 302 are processed in a circumferential arr...

specific Embodiment approach 2

[0043] Specific implementation mode two: combination Figure 1-Figure 6 Describe this embodiment, a high-quality SiC single crystal preparation device of this embodiment, the crucible main body 4 is fixed in the quartz tube 9 through the inner bracket 12;

[0044]It also includes a rotating mechanism 21, a lifting mechanism 22 and a connecting frame 11, and the rotating mechanism 21 and the lifting mechanism 22 are connected by the connecting frame 11;

[0045] The rotating mechanism 21 includes an upper frame 211, a motor 212, a driving gear 213, a connecting rod 214, a lower frame 215, a driven gear 216 and a drive shaft 217, and the upper frame 211 and the lower frame 215 are arranged through three circular arrays of connecting rods. 214 connection, the upper frame 211 is fixedly connected with the motor 212, the output end of the motor 212 is connected with the driving gear 213, the lower frame 215 is connected with the driving shaft 217 through the bearing, the driving sh...

specific Embodiment approach 3

[0048] Specific implementation mode three: combination figure 2 Describe this embodiment, a high-quality SiC single crystal preparation device of this embodiment, the outer sleeve 222 and the inner telescopic arm 223 are both square.

[0049] Specific implementation mode four: combination figure 1 , Figure 9 Describe this embodiment, a high-quality SiC single crystal preparation device of this embodiment, the filter screen 5 is a cylindrical barrel with an annular plate installed at the open end, the filter screen 5 is a graphite filter screen, the raw material 6 is a silicon carbide raw material, and the raw material 6 is fixed by a graphite filter, which can effectively prevent carbon particles from rising with the gas during purification and crystal growth, and prevent carbon particles from adhering to the surface of the seed crystal to form carbon inclusions. The stopper 102 is a graphite stopper.

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Abstract

The invention relates to a high-quality SiC single crystal preparation device and method, belonging to the field of crystal growth. The invention aims to solve the problems that SiC single crystals are poor in quality, growth of the SiC single crystals is not uniform enough, and the thickness of the SiC single crystals cannot meet market requirements. The device comprises an upper cover, a seed crystal, a lower cover, a main crucible body, a filter screen, a heat preservation body, a power rod, a quartz tube and a heating coil, wherein the filter screen is placed in the crucible body, the lower cover and the upper cover are arranged on the upper portion of the crucible body, the lower cover is located on the lower side of the upper cover, the lower side of the lower cover is connected with the seed crystal, the upper side of the upper cover is connected with the power rod, the outer wall of the main crucible body is wrapped by the heat preservation body, the main crucible body is arranged inside the quartz tube, and the heating coil is arranged outside the quartz tube. With the device and the method, impurities can be effectively removed, secondary introduction of new impurities is prevented, and crystal quality is effectively improved; a silicon carbide raw material is fixed by the graphite filter screen, so carbon particles can be effectively prevented from rising along with gas during purification and crystal growth; and during crystal growth, seed crystal rotation can be controlled, and the dislocation defect of crystal growth caused by gas flow velocity difference at different positions is prevented.

Description

technical field [0001] The invention relates to a SiC single crystal preparation device and method, belonging to the field of crystal growth. Background technique [0002] As a stable compound of C and Si, SiC has a lattice structure composed of two densely arranged sublattices. These properties of SiC make it the preferred material for semiconductor devices with high frequency, high power, high temperature resistance, and radiation resistance. It can be used in the monitoring of ground nuclear reactor systems, crude oil exploration, environmental monitoring, and extreme environments in the fields of aviation, aerospace, radar, communication systems, high-power electronic converters, and automotive motors. In addition, the radiation wavelength of light-emitting diodes prepared by SiC can cover the band from blue light to purple light, and has broad application prospects in the fields of optical information display systems and optical integrated circuits. [0003] Nowadays p...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/002C30B29/36
Inventor 不公告发明人
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司
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