Supercharge Your Innovation With Domain-Expert AI Agents!

A method for preparing a self-supporting film for hydrogen-boron fusion target film

A self-supporting thin film and fusion target technology, which is applied in the direction of superimposed layer plating, vacuum evaporation plating, coating, etc., can solve the problems of insufficient self-supporting strength of ultra-thin boron film, easy cracks, and unsatisfactory, to achieve The adsorption position is evenly distributed, the strength is improved, and the surface is smooth

Active Publication Date: 2022-06-28
ENN SCI & TECH DEV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the process of hydrogen-boron fusion experiment, the existing technology uses boron film as the target film, but the ultra-thin boron film with nanometer thickness prepared by the existing technology is not self-supporting enough, and it is necessary to add a substrate for support on its back. However, when the proton beam bombards the target membrane, since the proton beam will penetrate the target membrane and bombard the substrate, the ions bombarded on the substrate will interfere with the reaction signal bombarded on the membrane. Response signals are cumbersomely processed and differentiated; in theory, increasing the thickness of the boron film can realize its self-support and eliminate the interference of the substrate. However, the micron-scale thick boron film prepared by the prior art is prone to cracks due to its brittle material. and burst membrane, so it cannot meet the needs of hydrogen-boron fusion experiments for ultra-thin boron films and micron-sized thick boron films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing a self-supporting film for hydrogen-boron fusion target film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0053] In the above method for preparing a boron film, the thick film refers to a film with a thickness of 1000 nm to 10000 nm, and the thin film refers to a film with a thickness of 90 nm to 999 nm.

[0054] When the film-forming (boron film) method used in step (2) is different from the film-forming (film release agent) method used in step (1), the temperature of the silicon dioxide film needs to be lowered to After room temperature, start step (2).

[0055] When the film-forming (boron film) method used in step (2) is the same as the film-forming (release agent) method used in step (1) (for example, both are magnetron sputtering, or both are chemical vapor deposition methods), The same heating parameters are used, and the preparation of the boron film can be continued without cooling after the preparation of the release agent, which can reduce the stress of the film, improve the film quality of the target film, and shorten the preparation time of the target film. Therefore...

Embodiment 1

[0069] This embodiment is used to illustrate a method for preparing a silicon dioxide film on a substrate by thermal oxidation, and a method for preparing a micron-thick boron film by magnetron sputtering, which specifically includes the following steps:

[0070] (1) Using the silicon wafer as the substrate, first use deionized water, acetone and alcohol to clean in an ultrasonic cleaner for 20 minutes each, put it into a tube furnace immediately after drying, and preheat it at 1000 ° C for 1 hour to dry it. Pure oxygen is used as an oxidizing atmosphere to directly react with silicon to generate silicon dioxide at 1000 °C, and a silicon dioxide film with a thickness of 300 nm and a roughness of less than 1 nm is prepared.

[0071] (2) Preheating the cooled silicon wafer substrate with silicon dioxide film at 600°C for 1 hour, using the boron target as the boron source, argon as the sputtering gas, and the radio frequency power supply as the excitation source, at 0.4 Pa A 1.5-...

Embodiment 2

[0074] This embodiment is used to illustrate a method for preparing a silicon dioxide thin film on a substrate by a thermal oxidation method, and a method for preparing a nano-scale boron film by a magnetron sputtering method.

[0075] The difference between this embodiment and Embodiment 1 is that, in step (2), a boron film with a thickness of 90 nanometers is prepared on the silicon dioxide film under a pressure of 0.9 Pa, a power of 80 watts, and a temperature of 900°C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to membrane material preparation technology, and specifically discloses a method for preparing a self-supporting thin film for a hydrogen-boron fusion target membrane. A layer of silicon dioxide with a thickness of 300nm to 1000nm and a roughness of less than 1nm is prepared on the substrate first. A self-supporting film is prepared on the silicon dioxide film by a high-temperature process, and finally a self-supporting film product is obtained through a release treatment. The self-supporting film prepared by the preparation method of the present invention is uniform, dense and has few defects, which is beneficial to improve the stability of the signal of the subsequent fusion reaction, is not easy to produce cracks and burst membranes, and can meet the needs of ultra-thin boron films and micron membranes in hydrogen-boron fusion experiments. Level thick boron film needs.

Description

technical field [0001] The invention relates to the preparation technology of membrane materials, in particular to a preparation method of a self-supporting thin film for hydrogen-boron fusion target membrane. Background technique [0002] During the hydrogen-boron fusion experiment, the existing technology uses a boron film as the target film, and the ultra-thin boron film with nano-thickness prepared by the existing process is not self-supporting enough, and a substrate for support needs to be added on the back side. However, when the proton beam bombards the target membrane, since the proton beam will penetrate the target membrane and bombard the substrate, the bombarded ions on the substrate will interfere with the bombarded reaction signal on the membrane. The reaction signal is processed and distinguished; theoretically, increasing the thickness of the boron film can realize its self-support and shield the interference of the substrate. However, the micron-thick boron ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C28/04C23C14/10C23C14/35C23C16/40C23C14/18C23C16/28C23C16/01
CPCC23C28/04C23C14/10C23C14/35C23C16/402C23C14/185C23C16/28C23C16/01
Inventor 赵冠超代玲玲何延如魏彦存耿金峰聂革
Owner ENN SCI & TECH DEV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com