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Oxygen ion source based on solid electrolyte, ion implanter and application of oxygen ion source and ion implanter in preparation of SOI wafer

A solid-state electrolyte and oxygen ion technology, applied in the field of ion sources, can solve the problems of increasing ion beam loss, bulky and clumsy energy consumption of the ion implanter, and achieve the effects of simplifying the ion implanter, improving the efficiency, and shortening the ion transmission path.

Pending Publication Date: 2021-05-14
万华化学集团电子材料有限公司 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the introduction of the magnetic analyzer makes the entire ion implanter cumbersome and consumes a lot of energy, and the ultra-long ion transmission path also increases the loss of the ion beam along the way

Method used

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  • Oxygen ion source based on solid electrolyte, ion implanter and application of oxygen ion source and ion implanter in preparation of SOI wafer
  • Oxygen ion source based on solid electrolyte, ion implanter and application of oxygen ion source and ion implanter in preparation of SOI wafer
  • Oxygen ion source based on solid electrolyte, ion implanter and application of oxygen ion source and ion implanter in preparation of SOI wafer

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[0030] specific implementation plan

[0031] In order to better understand the technical solutions of the present invention, the following examples will further illustrate the design solutions provided by the present invention, but the present invention is not limited to the listed embodiments, and should also be included in the claims of the present invention any other known changes.

[0032] Such as figure 1 As shown, an ion implanter based on a solid electrolyte oxygen ion source is composed of an oxygen ion generator 1 on the right and an ion accelerating tube 2 on the left. Wherein, the oxygen ion generator 1 part is the core part of the ion source of the present invention, and the ion accelerating tube 2 part is the auxiliary part. Except that the auxiliary part does not have a magnetic analyzer, others can refer to the prior art. The core part and the auxiliary part are both Placed in the quartz tube 3, the quartz tube 3 is a high temperature resistant quartz glass tu...

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Abstract

The invention discloses an oxygen ion source based on a solid electrolyte, an ion implanter and an application of the oxygen ion source and the ion implanter in preparation of an SOI wafer. A solid electrolyte material is formed by processing zirconium oxide or cerium oxide powder doped with trivalent rare earth elements in an injection molding manner; and the oxygen ion source based on the solid electrolyte can obtain a high-purity negative oxygen ion beam at a suction electrode. The ion implanter based on the ion source does not need a magnetic analyzer to further screen the extracted ions, and can get rid of the use limitation of the magnetic analyzer, so that the design of the whole ion implanter is greatly simplified, and the energy consumption is greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of ion sources, and in particular relates to an oxygen ion source based on a solid electrolyte, an ion implanter and its application in preparing SOI wafers. [0002] technical background [0003] In recent years, a silicon layer is formed on an insulator, and SOI wafers with a Silicon on insulator structure have become more and more popular in the LSI and ULSI processes due to their superior performance in terms of high-speed, low power consumption, high-voltage resistance and environmental tolerance. s concern. [0004] The preparation of SOI wafers mainly includes bonding method and SIMOX (separation by ion-implanted oxygen) method. The so-called SIMOX method is to generate an oxygen ion beam through an ion source, accelerate it to a preset energy through an electrostatic acceleration tube, and then drive it into the surface of the silicon wafer. Under the specified depth, the subsequent annealing heat tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/08H01J37/317H01L21/265H01L21/762
CPCH01J37/08H01J37/3171H01L21/26533H01L21/76243
Inventor 周霖王洪武黄德智代冰冯帆胡碧波孙家宽
Owner 万华化学集团电子材料有限公司
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