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Triphenyl dioxazine imide diploid derivative and preparation method thereof

A technology of triphenyldioxazine imide and derivatives, which is applied in the field of diploid derivatives of triphenyldioxazine imide and its preparation, and achieves simple reaction conditions, good redox characteristics, and high electron-accepting ability Effect

Active Publication Date: 2021-05-28
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In 2017, our research group designed and synthesized a conjugated bridged triphenyldioxazinimide diploid structure, but the known triphenyldioxazinimide diploid structures all contain conjugated bridge phases. Connection, does not involve the study of triphenyldioxazinimide diploids directly connected by C-C single bonds. The diploid structure directly connected by C-C single bonds can produce steric torsion to inhibit molecular aggregation, through chemical modification of its structure , is expected to obtain N-type semiconductor materials with excellent photoelectric performance
So far, there are no diploid derivatives of triphenyldioxazine imides directly connected by C-C bonds

Method used

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  • Triphenyl dioxazine imide diploid derivative and preparation method thereof
  • Triphenyl dioxazine imide diploid derivative and preparation method thereof
  • Triphenyl dioxazine imide diploid derivative and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0020]

[0021] Weigh 1 g of bromotriphenyldioxazinimide and 987.52 mg of Cu powder into a reaction flask, add 25 ml of dimethyl sulfoxide, and stir and react at 120° C. for 18 hours. After the reaction was complete, the reaction solution was spin-dried under reduced pressure, and 0.4 g of the product was separated by column chromatography, with a yield of 45%, HRMS: found 1127.1800.

Embodiment 2

[0023]

[0024] Weigh 1 g of bromotriphenyldioxazinimide and 782.76 mg of Cu powder into a reaction flask, add 25 ml of dimethyl sulfoxide, and stir and react at 110° C. for 15 hours. After the reaction was complete, the reaction solution was spin-dried under reduced pressure, and 0.5 g of product was obtained by column chromatography, with a yield of 55%, HRMS: found 1463.8280.

Embodiment 3

[0026]

[0027] Weigh 1 g of bromotriphenyldioxazinimide and 782.76 mg of Cu powder into a reaction flask, add 25 ml of nitrogen methyl pyrrolidone, and stir and reflux at 140° C. for 8 hours. After the reaction was complete, the reaction solution was spin-dried under reduced pressure, and 0.45 g of the product was obtained by column chromatography, with a yield of 49%, HRMS: found 1688.2600.

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PUM

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Abstract

The invention discloses a triphenyl dioxazine imide diploid derivative and a preparation method thereof, and belongs to the technical field of organic synthesis. The material is a triphenyl dioxazine imide derivative with large conjugation and spatial distortion. According to the invention, monobrominated triphenyl dioxazine imide is adopted, and under catalysis of copper powder, a C-C single bond coupling method is adopted for synthesis. A triphenyl dioxazine imide diploid semiconductor material has excellent solubility in a common organic solvent, has strong absorption and high molar extinction coefficient in a visible light region, also has good oxidation-reduction characteristics and electron transmission performance, and can be applied to the field of organic photoelectricity.

Description

technical field [0001] The invention relates to a class of diploid derivatives of triphenyldioxazinimide and a preparation method thereof, belonging to the field of organic synthesis. Background technique [0002] The whole molecule of triphenyl dioxazine imide is composed of central triphenyl dioxazine skeleton and dicarboxylic acid imides on both sides. Its advantages include: strong absorption in the visible light region, high molar extinction coefficient, fluorescence quantum yield, good photostability and thermal stability, etc. It is a class of organic semiconductor materials with excellent performance. The 6-position and 14-position of triphenyldioxazinimide are affected by the electron-withdrawing groups of the imides on both sides, so the reactivity is strong, and aromatic electrophilic substitution reactions are easy to occur, and halogen can be introduced into triphenyldioxazinyl imines, a more complex chemical modification of the parent. [0003] In 2017, our r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D519/00H01L51/30H01L51/46H01L51/54
CPCC07D519/00H10K85/615H10K85/626H10K85/654H10K85/655H10K85/657H10K85/6572Y02E10/549
Inventor 陈令成李萌肖义
Owner DALIAN UNIV OF TECH
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