Electromigration test structure and electromigration test method

Abstract

The invention provides an electromigration test structure and an electromigration test method. The electromigration test structure comprises a metal interconnection structure to be tested; a first sensing electrode electrically connected with one end of the metal interconnection structure to be tested; a second sensing electrode electrically connected with the other end of the metal interconnection structure to be tested; at least one third sensing electrode at least electrically connected with the position between the two ends of the metal interconnection structure to be tested; a first loading electrode electrically connected with the first sensing electrode; and a second loading electrode electrically connected with the second sensing electrode. According to the technical scheme, the wiring design of the chip area can be prevented from being affected, wafer-level rapid testing can be carried out, and the specific position of electromigration failure can be rapidly judged.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to an electromigration test structure and an electromigration test method. Background technique [0002] In recent years, as the size of semiconductor devices has become smaller and more integrated, the research on the reliability of semiconductor devices has become more and more important, and the phenomenon of electro-migration (EM, Electro-Migration) is a phenomenon that affects reliability. one of the main failure mechanisms. The phenomenon of electromigration refers to the phenomenon that when the integrated circuit in the semiconductor device has a current passing through the metal interconnection, under the action of the current, metal ions produce material transport, that is, metal ions are driven from the negative electrode to the positive electrode by the "electron wind" As a result, a void (Void) will appear in the negative electrode of the m...

AI Technical Summary

Problems solved by technology

[0004] Since a plurality of welding pads are included in the dicing line area A1, a probe card matched with the layout of a plurality of welding pads can be used to test the device at wafer level during the electromigration test; however, due to the The test metal layer 11, the conductive plug 12 to be tested and part of the connecting metal wire 13 are located in the chip area, and the other part of the connecting metal wire 13 and a plurality of pads are located in the scribe line area A1, therefore, Figure 1a and Figure 1b The shown electromigration test structure occupies the area of ​​the chip area, affects the wiring design of the chip area, and then affects the performance of the chip

[0005] Especially for cost considerations, the width of the dicing line area is continuously shrinking (for example, from 90 μm to 45 μm), resulting in the electromigration test structure occupying more area of ​​the chip area, affecting the wiring design of the chip area, and resulting in Affect the performance of device; If electromigration test structure will be fully compressed to scribe line area, no longer occupy the area of ​​chip area, then need part pad (such as the first pad 14, the 2nd pad in the scribe line area A1) Disc 15) is removed, so that it will not be possible to use the probe card to carry out wafer-level rapid testing (because the hard material of the structure below the removed pad will damage the probe on the probe card), only the package level (package level) testing, resulting in additional packaging costs and increased cycle time (production cycle); in addition, using the existing electromigration test structure can only obtain the total resistance value of the entire metal interconnection structure to be tested before and after the test Therefore, it is impossible to directly determine the specific location of the failure on the metal interconnection structure to be tested through electrical testing, and the location of the electromigration failure can only be confirmed through multiple slice analysis, which is inefficient

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