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Preparation method and application of ultrathin silver-based OMO composite transparent conductive film

A technology of transparent conductive film and composite film, which is applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, semiconductor/solid-state device manufacturing, etc., to achieve the effect of improving optical transmittance and low penetration threshold thickness

Active Publication Date: 2021-06-01
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method solves the shortcomings of excessive NIR reflection in the near-infrared region caused by excessive permeation threshold thickness when conventionally growing Ag films, and improves the overall visible light and near-infrared region optical transmittance while maintaining good electrical conductivity.

Method used

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  • Preparation method and application of ultrathin silver-based OMO composite transparent conductive film
  • Preparation method and application of ultrathin silver-based OMO composite transparent conductive film
  • Preparation method and application of ultrathin silver-based OMO composite transparent conductive film

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Experimental program
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Embodiment 1

[0027] 1. Using the magnetron sputtering technology, the Ag target with a purity of 99.99% is used as the target raw material, and the dopant component Zn doping atomic percentage in the target is 8%; the flow rate of the sputtering gas Ar gas is 20 sccm, doped Miscellaneous gas O 2 The flow rate is 1sccm, the sputtering power is 140W, and the film gauge of the chamber is 0.3Pa; on the glass / MGZO (~50nm) substrate, the Ag-Zn(O) film is grown, the substrate temperature is room temperature, and the film thickness is ~ 4.5nm. Then use RPD technology to grow a layer of MGZO on the top layer at room temperature, and the film thickness is ~ 50nm. The structure of the composite film is glass / MGZO / Ag-Zn(O) / MGZO, such as figure 1 shown.

[0028] figure 2 (a) is the SEM image of the glass / (~50nm)MGZO / (~4.5nm)Ag-Zn(O) thin film, which shows a dense and continuous layered structure; figure 2 (b) is the optical transmittance of the glass / MGZO / Ag-Zn(O) / MGZO film, the film has a high ...

Embodiment 2

[0030] 1. Using the magnetron sputtering technology, the Ag target with a purity of 99.99% is used as the target material, and the dopant component Zn doping atomic percentage in the target is 8%; the flow rate of the sputtering gas Ar gas is 20 sccm, and the sputtering gas The radiation power is 140W, and the film gauge of the chamber is 0.3Pa; the Ag-Zn film is grown on the glass / SnOx (~50nm) substrate, the substrate temperature is 50°C, and the film thickness is ~5nm. Then use RPD technology to grow a layer of SnOx on the top layer at room temperature, and the thickness of the film is ~ 50nm. The structure of the composite film is glass / SnOx / Ag-Zn / SnOx.

[0031] 2. Apply the OMO composite film to perovskite solar cells, image 3 It is a schematic diagram of the structure of a pin-type semitransparent perovskite solar cell. First configure the precursor solution, and use the combination of spin coating and annealing process to prepare holes PEDOT:PSS or NiOx, perovskite ab...

Embodiment 3

[0033] 1. Using the magnetron sputtering technology, the Ag target with a purity of 99.99% is used as the target raw material, and the dopant component Zn doping atomic percentage in the target is 8%; the flow rate of the sputtering gas Ar gas is 20 sccm, doped Miscellaneous gas O 2 The flow rate is 1.0sccm, the sputtering power is 140W, and the film gauge of the chamber is 0.3Pa; on the PET / MGZO (~50nm) substrate, the Ag-Zn(O) film is grown, the substrate temperature is room temperature, and the film thickness is ~4.5nm. Reactive plasma deposition (RPD) technology is then used to grow a layer of MGZO on the top layer at room temperature, with a film thickness of ~50nm. The structure of the composite film is PET / MGZO / Ag-Zn(O) / MGZO, such as Figure 4 (a) shown.

[0034] 2. Apply the OMO composite film to flexible perovskite solar cells, Figure 4 (b) Schematic diagram of the structure of the flexible perovskite solar cell. After preparing the MGZO / Ag-Zn(O) / MGZO film on the...

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Abstract

The invention discloses a preparation method and an application of an ultrathin silver-based OMO composite transparent conductive film, and belongs to the field of optoelectronic devices. According to the invention, an ultrathin Ag-Zn film is grown by adopting a magnetron sputtering technology and the like, an Ag metal target material (Zn serves as a doping agent) serves as a raw material, an Ar gas serves as a sputtering gas, and a trace amount of O2 is selectively introduced in a film coating process; and an oxide film is grown by using a reaction plasma deposition technology and the like so as to form and obtain an Oxide / Ag-Zn / Oxide or Oxide / Ag-Zn (O) / Oxide composite film. The threshold thickness (about 5 nm) of the ultrathin Ag-Zn film is remarkably lower than that of an Ag film prepared through a conventional method, on the premise that good conductivity is kept, near-infrared NIR transmittance and wide-spectrum-range transmittance can be greatly improved, a manufacturing temperature and the coating cost are low, environment friendliness is achieved, and the OMO composite film can be applied to the photoelectric devices.

Description

technical field [0001] The invention relates to a preparation method of a transparent conductive electrode, in particular to a preparation method of an OMO composite film transparent conductive electrode based on an ultra-thin silver film and its application. Background technique [0002] Transparent conductive electrodes (transparent conductive electrodes-TCE) show broad application prospects in the field of optoelectronic devices (such as solar cells), reference: K Ellmer. Nature Photonics 6 (2012) 809-817. In transparent conductive oxide (TCO), Sn doped In 2 o 3 (ITO) and F-doped SnO 2 (FTO) thin film has both good photoelectric properties and chemical stability, and has become the most widely used bottom electrode material in the field of photoelectric devices. However, when the TCE needs to be prepared on the top of the device (such as a semi-transparent solar cell), the influence of the preparation process on the substrate needs to be considered. High-performance I...

Claims

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Application Information

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IPC IPC(8): H01B5/14H01B13/00H01L31/0224H01L33/42H01L51/42H01L51/44G09F9/30C23C14/35C23C14/18C23C14/20C23C14/08C23C14/24C23C14/06
CPCH01B13/00H01B5/14H01L31/022425H01L31/022491H01L33/42G09F9/301C23C14/35C23C14/0036C23C14/185C23C14/205C23C14/08C23C14/24C23C14/0688H10K30/10H10K30/82Y02E10/549
Inventor 陈新亮刘璋侯国付张晓丹赵颖
Owner NANKAI UNIV