A kind of preparation method and application of ultra-thin silver-based OMO composite transparent conductive film
A technology of transparent conductive film and composite film, which is applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, semiconductor/solid-state device manufacturing, etc., to achieve the effect of improving optical transmittance and low penetration threshold thickness
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Embodiment 1
[0027] 1. Using magnetron sputtering technology, Ag target with a purity of 99.99% is used as the target material, and the dopant component Zn in the target material is doped with an atomic percentage of 8%; the flow rate of the sputtering gas Ar gas is 20sccm, and Miscellaneous gas O 2 The flow rate was 1sccm, the sputtering power was 140W, and the chamber film gauge was 0.3Pa; on glass / MGZO (~50nm) substrates, Ag-Zn(O) films were grown at room temperature and the film thickness was ~ 4.5nm. Then, a layer of MGZO was grown on the top layer at room temperature by RPD technology with a film thickness of ~50 nm. The composite film structure is glass / MGZO / Ag-Zn(O) / MGZO, such as figure 1 shown.
[0028] figure 2 (a) is the SEM image of glass / (~50nm)MGZO / (~4.5nm)Ag-Zn(O) thin film, the thin film presents a dense and continuous layered structure; figure 2 (b) is the optical transmittance of glass / MGZO / Ag-Zn(O) / MGZO thin film, the thin film has high transmittance in the whole ...
Embodiment 2
[0030] 1. Using magnetron sputtering technology, the Ag target with a purity of 99.99% is used as the target material, and the dopant component Zn in the target material is doped at an atomic percentage of 8%; the flow rate of the sputtering gas Ar gas is 20sccm, and the sputtering The radiation power was 140W, and the chamber film gauge was 0.3Pa; Ag-Zn thin films were grown on glass / SnOx (~50nm) substrates at a substrate temperature of 50°C and a film thickness of ~5nm. Then, a layer of SnOx was grown on the top layer at room temperature by RPD technology, and the film thickness was ~50nm. The composite thin film structure is glass / SnOx / Ag-Zn / SnOx.
[0031] 2. Apply the OMO composite film to perovskite solar cells, image 3 Schematic diagram of the structure of pin-type translucent perovskite solar cells. First, a precursor solution is configured, and a combination of spin coating and annealing processes is used to prepare hole PEDOT:PSS or NiOx, perovskite absorber layer ...
Embodiment 3
[0033] 1. Using magnetron sputtering technology, Ag target with a purity of 99.99% is used as the target material, and the dopant component Zn in the target material is doped with an atomic percentage of 8%; the flow rate of the sputtering gas Ar gas is 20sccm, and Miscellaneous gas O 2 The flow rate was 1.0sccm, the sputtering power was 140W, and the chamber film gauge was 0.3Pa; Ag-Zn(O) films were grown on the PET / MGZO (~50nm) substrate, the substrate temperature was room temperature, and the film thickness was ~4.5nm. A layer of MGZO was then grown on the top layer at room temperature by reactive plasma deposition (RPD) with a film thickness of ~50 nm. The composite film structure is PET / MGZO / Ag-Zn(O) / MGZO, such as Figure 4 (a).
[0034] 2. Apply the OMO composite film to flexible perovskite solar cells, Figure 4 (b) Schematic diagram of the structure of the flexible perovskite solar cell. After preparing MGZO / Ag-Zn(O) / MGZO thin films on flexible PET, a precursor so...
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