Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of perovskite quantum dot surface passivation layer suitable for HIT battery

A battery surface and quantum dot technology, applied in the field of solar cells, can solve the problems of HIT battery process incompatibility, etc., and achieve the effects of improving minority carrier life, improving overall efficiency, and enhancing interface electric field

Pending Publication Date: 2021-06-01
SUZHOU UNIV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a common surface passivation material is thermally grown SiO x , Al 2 o 3 , SiN x Most of them require complex preparation conditions and processes such as high temperature, which are incompatible with the HIT battery process prepared at low temperature
However, there are no reports on how to combine perovskite quantum dots with crystalline silicon heterojunction cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of perovskite quantum dot surface passivation layer suitable for HIT battery
  • Preparation method of perovskite quantum dot surface passivation layer suitable for HIT battery
  • Preparation method of perovskite quantum dot surface passivation layer suitable for HIT battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The preparation method of the surface passivation layer of perovskite quantum dots suitable for HIT battery includes the following steps:

[0028] S1. Provide unencapsulated heterojunction solar cells (Heterojunction with Intrinsic Thin-layer, HIT), and cesium lead bromide perovskite quantum dots dispersed in n-hexane solvent at a concentration of 2 mg / mL. Cesium lead bromide perovskite quantum dots can interact with ITO on the battery surface.

[0029] S2, the cesium lead bromide perovskite quantum dot dispersion liquid is uniformly dispersed on the surface of the heterojunction solar cell, and the cesium lead bromide perovskite quantum dots with a thickness of about 15 nm are deposited. It not only meets the requirements of improving sufficient surface passivation layer, but also does not affect the electrical contact of the battery surface.

[0030] S3. Use a low temperature thermal annealing process at 90°C for 30 minutes to remove excess solvent, so that the cesiu...

Embodiment 2

[0033] 1. Device IV characteristic test under different surface quantum dot distribution densities

[0034] The IV data listed in Table 1 were all obtained by the Sinton FCT-450 system test, which was completed in the laboratory of Suzhou Astor Sunshine Power Technology Co., Ltd.

[0035] Comparing the IV performance of heterojunction cells with surface passivation of different amounts of quantum dots, it can be seen that after the surface passivation of perovskite quantum dots, the battery performance can be improved to a certain extent, and the optimal concentration distribution of perovskite quantum dots is in the spray coating. The speed is about 0.2ml / min, and the corresponding quantum dot thickness under this condition is about 15nm.

[0036] Table 1 IV performance parameters of surface passivation heterojunction cells with different surface distribution densities of quantum dots

[0037]

[0038] 2. External quantum efficiency test

[0039] exist image 3 The exte...

Embodiment 3

[0043] 1. Device IV characteristic parameters

[0044]The devices presented in Table 2 were tested with a Newport Solar Simulator and a Keithley 2612 SourceMeter. It can be seen from the comparison that the performance of the solar cell has been improved after the quantum dot modification.

[0045] Table 2 PEDOT with and without quantum dot surface passivation: Comparison of IV characteristic parameters of PSS / Si heterojunction cells

[0046]

[0047] 2. External quantum efficiency test

[0048] exist Figure 4 The external quantum efficiency data of the devices shown in this paper are all obtained through the commercial battery quantum efficiency system test, and the test is completed on the solar cell quantum efficiency instrument of Guangyan Technology Company. The results show that the response is slightly reduced in the short waveband; the quantum dot efficiency is significantly improved in the long waveband, which means that the photocurrent increases.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a perovskite quantum dot surface passivation layer suitable for an HIT battery; the method is characterized in that a layer of surface field effect passivation material perovskite quantum dots is newly introduced on the basis of the existing crystalline silicon heterojunction battery structure, and an interface electric field can be formed between the perovskite quantum dots and ITO (Indium Tin Oxide) on the surface. Under an illumination condition, the interface electric field can be further enhanced, and a surface field effect passivation layer is formed on the surface of the cell under the combined action of the interface electric field and a part of photo-induced electrons localized in the perovskite quantum dots. Meanwhile, a low-temperature annealing process required by the perovskite quantum dots enables the perovskite quantum dots to be compatible with a low-temperature process of an HIT battery.

Description

technical field [0001] The invention relates to a preparation method for a surface passivation layer of perovskite quantum dots suitable for HIT cells, and belongs to the technical field of solar cells. Background technique [0002] In today's society, energy and environmental problems are increasingly affecting the rapid development of society. The research and application of clean and renewable energy has attracted widespread attention in society. As a reliable renewable energy acquisition method, solar cells have been vigorously promoted and applied. The efficiency of solar cells has been a major concern. With the continuous development and improvement of technology in recent years, the efficiency of heterocrystalline silicon solar cells has been improved to a certain extent, but there is still a gap compared with the theoretical limit efficiency. Interface passivation remains an important means to improve cell efficiency. The surface of the HIT cell is bare ITO and l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/072H01L31/18
CPCH01L31/035218H01L31/072H01L31/1868Y02E10/50Y02P70/50
Inventor 孙宝全张国华宋涛
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com