Deep trench MOSFET terminal structure and preparation method thereof

A terminal structure and deep groove technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of limited device withstand voltage, high on-resistance, and reduced reliability, and achieve improved on-resistance , the injection concentration is small, and the effect of improving the withstand voltage characteristics

Pending Publication Date: 2021-06-11
HUNTECK SEMICON (SHANGHAI) LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a deep trench MOSFET terminal structure and its preparation method, which is used to solve the problem that the withstand voltage of the terminal pr

Method used

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  • Deep trench MOSFET terminal structure and preparation method thereof
  • Deep trench MOSFET terminal structure and preparation method thereof
  • Deep trench MOSFET terminal structure and preparation method thereof

Examples

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Example Embodiment

[0088] Embodiment one

[0089] see figure 1 , the present invention provides a method for preparing a deep trench MOSFET termination structure, the preparation method of the deep trench MOSFET termination structure comprising steps:

[0090] 1) providing a substrate of the first conductivity type, the substrate of the first conductivity type includes an active region and a terminal protection region located on the periphery of the active region;

[0091] 2) forming an epitaxial layer of the first conductivity type on the upper surface of the substrate of the first conductivity type, the epitaxial layer of the first conductivity type covering the active region and the terminal protection region;

[0092] 3) forming a plurality of first trenches and a plurality of second trenches in the epitaxial layer of the first conductivity type, wherein the first trenches are located in the terminal protection area, and the plurality of first trenches Grooves are arranged at intervals in ...

Example Embodiment

[0151] Embodiment two

[0152] Please combine Figure 2 to Figure 11 read on Figure 12 , the present invention also provides a deep trench MOSFET terminal structure, the deep trench MOSFET terminal structure includes: a substrate 10 of the first conductivity type, the substrate 10 of the first conductivity type includes an active region 101 and a The terminal protection area 102 on the periphery of the active area 101; the epitaxial layer 11 of the first conductivity type, the epitaxial layer 11 of the first conductivity type is located on the upper surface of the substrate 10 of the first conductivity type, and covers the The active area 101 and the terminal protection area 102; a plurality of first trenches 12, the first trenches 12 are located in the epitaxial layer 11 of the first conductivity type and are located in the terminal protection area 102 a plurality of the first grooves 12 are arranged at intervals in the terminal protection area 102; the distance between th...

Example Embodiment

[0184] Embodiment three

[0185] Please combine Figure 1 to Figure 12 refer to Figure 13 to Figure 17 , the present invention also provides a method for preparing a deep trench MOSFET terminal structure, the method for preparing a deep trench MOSFET terminal structure described in this embodiment is the same as the method for preparing a deep trench MOSFET terminal structure described in Example 1 roughly the same, the difference between the two lies in the difference between step 6) and step 7), specifically: the upper surface of the second dielectric layer 17 and the second source polysilicon obtained in step 6) in the first embodiment The upper surfaces of the layers 18 are lower than the upper surface of the epitaxial layer 11 of the first conductivity type, such as Figure 8 As shown, while the upper surface of the second dielectric layer 17 obtained in step 6) of this embodiment is lower than the upper surface of the epitaxial layer 11 of the first conductivity type,...

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Abstract

The invention provides a deep trench MOSFET terminal structure and a preparation method thereof. The deep trench MOSFET terminal structure comprises a substrate of a first conductive type; an epitaxial layer of a first conductivity type; a plurality of first trenches; a first dielectric layer; a first source polysilicon layer; a first well region of a second conductivity type; a plurality of second trenches; a second dielectric layer; a second source polysilicon layer; a gate polysilicon layer; a gate oxide layer and an insulating isolation layer. According to the deep-groove MOSFET terminal structure, the first well region of the second conduction type is arranged at the bottom of the first groove of the terminal protection region to serve as a JTE structure, so that an electric field at the bottom of the first groove is dispersed, a longitudinal electric field transversely extends in the terminal protection region, the voltage withstanding characteristic of the deep-groove MOSFET terminal structure is effectively improved, the withstand voltage of the terminal protection area is higher than that of the active area and is not limited by the withstand voltage of the active area, and terminal protection can be effectively carried out.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit design and manufacture, and in particular relates to a deep trench MOSFET terminal structure and a preparation method thereof. Background technique [0002] In the design of power semiconductor devices, the design of the terminal protection area is very important. The design of the active area determines the characteristics of the resistance, capacitance and breakdown voltage of the power semiconductor device, but it is limited by the effectiveness and area of ​​the terminal protection design. In a good terminal design, in order to ensure reliability during the period, the voltage breakdown point should fall in the active area instead of the terminal protection area. At the same time, the area occupied by the terminal protection area will directly affect the on-resistance of the active area. [0003] Because the performance of deep trench devices is better than that of traditional tren...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L29/36H01L21/336
CPCH01L29/0607H01L29/0649H01L29/0684H01L29/36H01L29/66666H01L29/7828
Inventor 罗志云王飞潘梦瑜
Owner HUNTECK SEMICON (SHANGHAI) LTD
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