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Preparation method and application of Bi2Ti4O11:Yb, Er up-conversion luminescence anti-counterfeiting film

A thin-film, uniform technology, applied in rayon manufacturing, fiber chemical characteristics, instruments, etc., can solve problems such as complex equipment, achieve high safety, avoid the use of toxic inks, and have good concealment

Inactive Publication Date: 2021-06-15
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the multi-level anti-counterfeiting technology based on up-conversion materials has made some breakthroughs, the equipment used is still relatively complicated, such as lasers with multiple wavelengths, and printing and screen printing technologies are mostly used in practical applications. Some toxic and harmful inks are used

Method used

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  • Preparation method and application of Bi2Ti4O11:Yb, Er up-conversion luminescence anti-counterfeiting film
  • Preparation method and application of Bi2Ti4O11:Yb, Er up-conversion luminescence anti-counterfeiting film
  • Preparation method and application of Bi2Ti4O11:Yb, Er up-conversion luminescence anti-counterfeiting film

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preparation example Construction

[0050] A kind of Bi of the present invention 2 Ti 4 o 11 : Yb, the preparation method of Er up-conversion luminescence anti-counterfeiting film, comprises the following steps:

[0051] S1. Mix DMF with HAC and TBOT at a mass ratio of (3-5): 1:1 to obtain solution A;

[0052] S2, adding bismuth nitrate with a mass ratio of (0.17 to 0.23): 1 to solution A into solution A, and obtaining solution B after fully stirring;

[0053] S3, adding ytterbium nitrate and erbium nitrate in solution B successively, wherein the mass fraction of erbium nitrate is 2%, and the mass ratio of ytterbium nitrate and erbium nitrate is (5~20):1, obtains solution C after fully dissolving;

[0054] S4, the solution C is evaporated to dryness, the temperature of the treatment is 250° C., and the treatment time is 2-3 hours, and a gray-black powder is obtained;

[0055] S5, annealing the powder in a muffle furnace, the annealing temperature is 800-1000°C, and the annealing time is 6-8h;

[0056] S6. M...

Embodiment 1

[0064] Mix DMF, HAC and TBOT uniformly according to the mass ratio of 3:1:1 to form a transparent solution A; then add bismuth nitrate with a mass ratio of 0.17:1 to solution A under magnetic stirring to obtain solution B; Add ytterbium nitrate and erbium nitrate, wherein the mass fraction of erbium nitrate is 2%, and the mass ratio of ytterbium nitrate to erbium nitrate is 5:1. After dissolving, solution C can be obtained; solution C is evaporated to dryness at 250°C for 2 hours , and then the obtained powder was moved into a muffle furnace and treated at 800 °C for 6 h to obtain Bi with high crystallinity and up-conversion luminescence properties. 2 Ti 4 o 11 : Yb 3+ , Er 3+Powder. Mix TPU, THF and DMF uniformly at a mass ratio of 0.3:1:1 to obtain a transparent solution D with a certain viscosity, and then add Bi with a mass fraction of 8% 2 Ti 4 o 11 : Yb 3+ , Er 3+ The powder is dispersed into the solution D to obtain the electrospinning precursor. Transfer the ...

Embodiment 2

[0067] Mix DMF, HAC and TBOT uniformly according to the mass ratio of 3.5:1:1 to form a transparent solution A; then add bismuth nitrate with a mass ratio of 0.19:1 to solution A under magnetic stirring to obtain solution B; Add ytterbium nitrate and erbium nitrate, wherein the mass fraction of erbium nitrate is 2%, and the mass ratio of ytterbium nitrate to erbium nitrate is 10:1. After dissolving, solution C can be obtained; solution C is evaporated to dryness at 250°C for 3 hours , and then the obtained powder was moved into a muffle furnace and treated at 850 °C for 7 h to obtain Bi with high crystallinity and up-conversion luminescence properties. 2 Ti 4 o 11 : Yb 3+ , Er 3+ Powder. Mix TPU, THF and DMF uniformly at a mass ratio of 0.3:1:1 to obtain a transparent solution D with a certain viscosity, and then add 9% Bi 2 Ti 4 o 11 : Yb 3+ , Er 3+ The powder is dispersed into the solution D to obtain the electrospinning precursor. Transfer the electrospinning prec...

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Abstract

The invention discloses a preparation method and application of a Bi2Ti4O11:Yb, Er up-conversion luminescence anti-counterfeiting film. HAC, DMF and TBOT solutions are uniformly mixed, bismuth nitrate, ytterbium nitrate and erbium nitrate are sequentially added, after the bismuth nitrate, the ytterbium nitrate and the erbium nitrate are fully dissolved, a mixture is evaporated to dryness to obtain gray black powder, the powder is annealed, TPU, THF and DMF are dissolved to obtain a uniform transparent solution with viscosity, and Bi2Ti4O11:Yb, Er powder is added under a stirring condition and is fully dissolved to obtain an electrostatic spinning precursor solution. The precursor solution is transferred into an electrostatic field, an electrostatic spinning process is performed, and a spinning product is obtained on a collecting plate. The collecting plate is put into a drying oven to be dried. Finally, the film is white and transparent under a fluorescent lamp, and no light emitting phenomenon exists. However, under the excitation of a 980 nm laser, the film shows excellent up-conversion luminescence performance. By adjusting the doping proportion of the ytterbium nitrate and the erbium nitrate, the anti-counterfeiting film with red, yellow and green up-conversion luminescence properties can be obtained.

Description

technical field [0001] The invention belongs to the technical field of optical anti-counterfeiting, in particular to a Bi 2 Ti 4 o 11 : Preparation method and application of Yb, Er up-conversion luminescent anti-counterfeiting film. Background technique [0002] The counterfeiting of banknotes, electronic products, food, medicine and art has become a common concern of the international community. These counterfeit and shoddy products have caused serious negative impacts on people's daily life, life and health, and national economic development. Therefore, the development of advanced anti-counterfeiting technology is of great significance to the protection of national security. At present, a variety of anti-counterfeiting technologies have been developed, such as plasma technology, radio frequency identification technology, anti-counterfeiting ink, laser holography and so on. However, the production cost of these technologies is relatively high, and the complexity of the ...

Claims

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Application Information

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IPC IPC(8): D04H1/4326D04H1/728D01F6/94D01F1/10G09F3/02
CPCD04H1/4326D04H1/728D01F6/94D01F1/10G09F3/02
Inventor 葛万银徐美美陆晨辉张盼锋张伟
Owner SHAANXI UNIV OF SCI & TECH
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