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High-purity Cu-Al-Ag alloy for chip lead frame material and preparation method of high-purity Cu-Al-Ag alloy

A lead frame and alloy technology, which is applied in the field of high-purity Cu-Al-Ag alloy for chip lead frame materials and its preparation, can solve the problems of many miscellaneous phases, low purity of the alloy, and changes in the conductivity of the alloy when placed in a strength hardness tester. , to achieve the effect of high conductivity, high purity and high strength

Active Publication Date: 2021-06-18
KUNSHAN BRANCH INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, improper control of trace elements will cause great changes in the strength of the alloy and the electrical conductivity of the hardness tester; at the same time, the melting process of CuNiSi alloy is complicated, and the addition of trace elements will cause the purity of the alloy to be difficult to control and have many impurities. Therefore, CuNiSi The smelting process of series alloys is complicated, and the purity of the alloys is low, and the conductivity and strength are unstable

Method used

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  • High-purity Cu-Al-Ag alloy for chip lead frame material and preparation method of high-purity Cu-Al-Ag alloy
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  • High-purity Cu-Al-Ag alloy for chip lead frame material and preparation method of high-purity Cu-Al-Ag alloy

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preparation example Construction

[0027] The invention provides a method for preparing a high-purity Cu-Al-Ag alloy for a chip lead frame material, comprising:

[0028] Copper powder, aluminum powder and silver powder are mixed and ball milled to obtain a mixed powder;

[0029] Cold isopressing the mixed powder to obtain a Cu-Al-Ag alloy blank;

[0030] The Cu-Al-Ag alloy blank is spark plasma sintered to obtain a Cu-Al-Ag alloy material.

[0031]The preparation method of a high-purity Cu-Al-Ag alloy for chip lead frame material provided by the present invention firstly mixes copper powder, aluminum powder and silver powder.

[0032] In the present invention, firstly, Cu powder, Al powder and Ag powder are respectively weighed according to the mass ratio. Wherein the copper powder is prepared by electrochemical method with a particle size of 4-6 μm and a purity of 99.9999%; the aluminum powder is prepared by a high-energy ball milling method with a particle size of 4-6 μm and a purity of 99.9995%; the silver...

Embodiment 1

[0050] Weigh Cu powder, Al powder and Ag powder respectively according to mass ratio. Among them, Cu powder is prepared by electrochemical method with a particle size of about 5 μm and a purity of 99.9999%; Al powder is prepared by a high-energy ball milling method with a particle size of about 5 μm and a purity of 99.9995%; Ag powder is prepared by a liquid phase chemical reduction method. The particle size is about 2 μm, and the purity is 99.99%. Wherein, the mass ratio Cu-1-XAl-XAg and the alloy composition (wt%) are weighed, wherein, the Cu content is 99%, X is the Ag content of 0-0.6%, and the X values ​​are 0 respectively.

[0051] Powder mixing by mechanical alloying method: Put the powder weighed above in a sealed ball mill tank under a protective atmosphere, and place it on a high-energy ball mill for ball milling, in which the balls are ZrO 2 composition, diameter of the ball In order to provide the uniformity of the particle size of the mixed powder, the diameter...

Embodiment 2

[0056] Weigh Cu powder, Al powder and Ag powder respectively according to mass ratio. Among them, Cu powder is prepared by electrochemical method with a particle size of about 5 μm and a purity of 99.9999%; Al powder is prepared by a high-energy ball milling method with a particle size of about 5 μm and a purity of 99.9995%; Ag powder is prepared by a liquid phase chemical reduction method. The particle size is about 2 μm, and the purity is 99.99%. Wherein, the mass ratio Cu-1-XAl-XAg and the alloy composition (wt%) are weighed, wherein, the Cu content is 99%, X is the Ag content of 0-0.6%, and the X values ​​are 0.2 respectively.

[0057] Powder mixing by mechanical alloying method: Put the powder weighed above in a sealed ball mill tank under a protective atmosphere, and place it on a high-energy ball mill for ball milling, in which the balls are ZrO 2 composition, diameter of the ball In order to provide the uniformity of the particle size of the mixed powder, the diamet...

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Abstract

The invention provides a preparation method of a high-purity Cu-Al-Ag alloy for a chip lead frame material. The preparation method comprises the steps that copper powder, aluminum powder and silver powder are mixed and subjected to ball milling, and mixed powder is obtained; the mixed powder is subjected to cold isostatic pressing forming, and a Cu-Al-Ag alloy blank is obtained; and the Cu-Al-Ag alloy blank is subjected to spark plasma sintering, and the Cu-Al-Ag alloy material is obtained. According to the preparation method, high-purity copper is prepared by adopting a wet chemical method, Al and Ag components are added into copper alloy, an alloy biscuit is prepared by adopting a cold isostatic pressing technology, and then a spark plasma sintering (SPS) technology is combined, so that a copper-aluminum alloy material can be prepared at a relatively low temperature, and the prepared chip frame material is high in purity, high in conductivity, high in heat dissipation performance and high in strength, and thus, the performance requirements of high-end chip frames and packaging materials at present are met.

Description

technical field [0001] The invention relates to the technical field of materials, in particular to a high-purity Cu-Al-Ag alloy for chip lead frame materials and a preparation method thereof. Background technique [0002] Integrated circuit IC products are composed of several parts such as chips, leads and lead frames, adhesive materials, and packaging materials. Among them, the lead frame, as the chip carrier of the integrated circuit, is a key structural part that realizes the electrical connection between the lead-out end of the internal circuit of the chip and the external lead by means of bonding materials (gold wire, aluminum wire, copper wire), and forms an electrical circuit. It plays the role of a bridge connecting with external wires. Most of the semiconductor integrated blocks need to use lead frames, which is an important basic material in the electronic information industry. At present, the integration level of chips has been advancing at a high speed according...

Claims

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Application Information

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IPC IPC(8): C22C9/01C22C1/04C22C9/00B22F3/04B22F3/105B22F9/04
CPCC22C9/01C22C1/0425C22C9/00B22F3/04B22F3/105B22F9/04B22F2009/043
Inventor 杜勇梁晓新何霜霜
Owner KUNSHAN BRANCH INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCI