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Surface acoustic wave device

A surface acoustic wave, substrate technology, applied in impedance network, polycrystalline material growth, single crystal growth and other directions, can solve the problem of impossible piezoelectric material substrate small and so on

Inactive Publication Date: 2003-12-03
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although ST quartz and LT 112 are generally considered to be suitable materials for the piezoelectric material substrates of surface acoustic wave filters for intermediate frequency circuits, due to their SAW velocities exceeding 3000 m / s, it is almost impossible to make the piezoelectric material Electric material substrates made smaller

Method used

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Examples

Experimental program
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Effect test

Embodiment

[0029] The piezoelectric material substrate 1 of the surface acoustic wave device belongs to the point set 32, and its chemical formula is Sr 3 TaGa 3 Si 2 o 14 made of single crystals. The single crystal was grown using the CZ technique using high-frequency induction heating, that is, a reverse-to-up pull process. The raw material of this single crystal is SrCO with a purity of 99.99%. 3 , Ta 2 o 5 , Ga 2 o 3 and SiO 2 Oxide powders are mixed in a stoichiometric ratio to make a mixture. N 2 Mixed with 2% (by volume) of oxygen as a single crystal growth atmosphere. The rotation speed of the crystal, the speed of the upward pull and the orientation of the upward pull are respectively set to 5 rpm, 1.5 mm / h, and (0001). As a result, a single crystal having a diameter of 52 mm was obtained.

[0030] A part of the crystal was pulverized, and then, using an X-ray diffractometer, the whole-phase structure of the pulverized powder was identified. It is proved by this ho...

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PUM

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Abstract

A surface acoustic wave device has a piezoelectric substrate whose properties include electromechanical coupling coefficient advantageous to widening passband width and SAW velocity advantageous to achieving a compact surface acoustic wave device. The piezoelectric substrate is composed of the single crystal represented by chemical formula Sr3TaGa3Si2O14 belonging to point group 32. For example, cut angle of the single crystal and propagation direction of the surface acoustic wave are in region 1-1, wherein said region 1-1 represented by Euler angles (phi, theta, psi) satisfies phi=25 DEG ~35 DEG , theta=20 DEG ~90 DEG , psi=-40 DEG ~40 DEG . These angles may be in range 1-2, wherein said range 1-2 satisfies phi=25 DEG ~35 DEG , theta=20 DEG ~90 DEG , psi=-25 DEG ~25 DEG .

Description

technical field [0001] The invention relates to a surface acoustic wave device in which interdigitated electrodes are arranged on a piezoelectric material substrate. Background technique [0002] In recent years, mobile communication terminals including mobile phones have been widely used. From the point of view of portability, one of the most important characteristics required of these terminals is compactness and light weight. [0003] In order to make the terminal compact and lightweight, each electronic component used in the terminal must be compact and lightweight. A surface acoustic wave device that can well meet the above requirements - the so-called surface acoustic wave filter has been widely used as a filter in intermediate frequency or high frequency circuits of terminals. [0004] In order to excite, receive, reflect and propagate surface acoustic waves, the surface acoustic wave device has a substrate made of piezoelectric material, and an interdigitated elect...

Claims

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Application Information

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IPC IPC(8): C30B33/00H03H9/02
CPCH03H9/02543C30B33/00C30B29/34
Inventor 井上宪司佐藤胜男守越広树川嵜克己内田清志
Owner TDK CORPARATION