A Magnetic Random Access Memory Based on Group III-V Narrow Bandgap Semiconductors

Abstract

The invention discloses a magnetic random access memory based on III-V narrow-bandgap semiconductors. Realized the use of the integrated circuit board and the narrow bandgap core frame board, through the built-in laminated composite circuit panel to guide the diode through-hole to connect the frequency conversion relay board and the narrow bandgap pin to form a cross-pass dislocation frequency conversion relay operation effect, Guarantee the increasing protection degree of the inclined frame bellows in the frequency conversion relay and the narrow band gap laminated relay operation effect of the semiconductor compound of the narrow band gap pin, and then improve the electromagnetic anti-interference strength of the magnetic random access memory and the separator through the arc-extinguishing brush wheel rod Electrostatic particles and dust particles improve the operation effect of the circuit panel with the refined structure of the central control input and output of the internal relay contact, improve the timeliness and durability of the memory, reduce the hidden danger of downtime, and improve the smooth storage operation efficiency.

Description

technical field [0001] The invention relates to a magnetic random access memory based on III-V group narrow bandgap semiconductors, which belongs to the field of electronics. Background technique [0002] The bipolar transistor storage and compound semiconductor storage of magnetic random access memory are highly efficient in operation, improve the storage density of the host computer and the high-speed computing efficiency of big data integration, and ensure the sensitivity and precision of continuous high-frequency data input and output reading of the memory stick. The current technology Common disadvantages to be optimized are: [0003] Based on the photovoltaic semiconductor compound chip board with narrow band gap of III-V family to prepare single-chip integrated magnetic random access memory, it has a good medium to transmit electric signals in the nature of magnetoresistance, but the superimposed semiconductor board will generate static electricity due to the magnetic...

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Problems solved by technology

[0004] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a magnetic random access memory based on III-V narrow bandgap semiconductors, to solve the problem of preparing single-chip integrated magnetic memory based on III-V narrow bandgap photovoltaic semiconductor compound chip boards. Random access memory has a good medium to transmit electrical signals in terms of magnetoresistance properties, but the superimposed semiconductor plates will generate static particles and absorb dust particles due to the magnetic button wires, thus affecting the operation efficiency of semiconductor memory bars using bipolar transistors , causing the memory module to continue to crash or fail to read, affecting the running cache band of the computer host and the problem of database conversion operations

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