Quantum dot film, and quantum dot light-emitting diode and preparation method thereof

A technology of quantum dot luminescence and quantum dots, which is applied in the fields of luminescent materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc.

Active Publication Date: 2021-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention aims to solve the application problem of quantum dot film

Method used

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  • Quantum dot film, and quantum dot light-emitting diode and preparation method thereof
  • Quantum dot film, and quantum dot light-emitting diode and preparation method thereof

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preparation example Construction

[0055] as attached figure 1 As shown, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, including steps:

[0056] S10. Providing a substrate containing a first electrode;

[0057] S20. Depositing and forming a quantum dot light-emitting layer on the side of the first electrode away from the substrate, the quantum dot light-emitting layer includes quantum dots grafted with ligands on the surface, wherein the quantum dot light-emitting layer is close to the One side surface of the first electrode includes quantum dots grafted with a first ligand, and the other side surface of the quantum dot light-emitting layer includes quantum dots grafted with a second ligand,

[0058] The first ligand and the second ligand are respectively selected from one of the following different structural formulas: And the first ligand and the second ligand are different structural formulas; wherein, n 1 ≤12,n 2 ≤12, 12≤n 3 ≤17, 12≤n ...

Embodiment 1

[0089] A quantum dot light-emitting diode (QLED), wherein the side surface of the quantum dot near the hole transport layer in the quantum dot light-emitting layer is grafted with the first ligand of benzyltrimethylammonium bromide; the quantum dot light-emitting layer The side surface of the quantum dot near the electron transport layer is grafted with the second ligand of dioctadecyldimethylammonium bromide, including the following preparation steps:

[0090] (1) Preparation of quantum dots grafted with the first ligand of benzyltrimethylammonium bromide on the surface:

[0091] ①At room temperature, mix 50mg of benzyltrimethylammonium bromide with 20ml of chloroform, and heat at 50°C under reflux until completely dissolved to obtain the first ligand solution of benzyltrimethylammonium bromide;

[0092] ② Under the condition of argon gas atmosphere and 150°C, add the above-mentioned The first ligand solution of benzyltrimethylammonium bromide in ① and 50ml of octadecene wer...

Embodiment 2

[0099] A quantum dot light-emitting diode (QLED), wherein the side surface of the quantum dot near the hole transport layer in the quantum dot light-emitting layer is grafted with the first ligand of nonyltrimethylammonium bromide; the quantum dot light-emitting layer The side surface of the quantum dot near the electron transport layer is grafted with the second ligand of dioctadecyldimethylammonium bromide, including the following preparation steps:

[0100] (1) Preparation of quantum dots grafted with the first ligand of nonyltrimethylammonium bromide on the surface:

[0101] ①At room temperature, mix 50mg of nonyltrimethylammonium bromide with 20ml of chloroform, and heat at 50°C under reflux until completely dissolved to obtain the first ligand solution of nonyltrimethylammonium bromide;

[0102] ② Under the condition of argon gas atmosphere and 150°C, add the above-mentioned The first ligand solution of nonyltrimethylammonium bromide in ① and 50ml of octadecene were rea...

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Abstract

The invention belongs to the technical field of light emitting diodes, and particularly relates to a quantum dot film. According to the invention, one surface of the quantum dot film is grafted with a first ammonium halide ligand; and the other surface, opposite to the surface grafted with the first ammonium halide ligand, of the quantum dot film is grafted with a second ammonium halide ligand. According to the quantum dot film provided by the invention, the injection efficiency of holes and electrons to a quantum dot light-emitting layer can be improved through different types of ammonium halide ligands grafted on the surfaces of the two sides, so the injection of the holes and the electrons to the quantum dot light-emitting layer is balanced, and the recombination efficiency of the holes and the electrons in the quantum dot light-emitting layer is improved. On the premise that the optical performance of quantum dots is not affected, the stability and dispersity of the quantum dots are remarkably improved, and meanwhile the recombination probability of carriers in a quantum dot light-emitting layer is increased.

Description

technical field [0001] The invention belongs to the technical field of light emitting diodes, and in particular relates to a quantum dot thin film, a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Quantum dots refer to semiconductor nanomaterials in which excitons are bound in three-dimensional directions, and the particle size is generally 1-100nm. Due to the existence of the "quantum confinement" effect, quantum dots have a discontinuous electronic energy level structure similar to atoms. As the size of quantum dots is further reduced, the continuous energy band structure becomes a discontinuous discrete energy level structure. Can emit significant fluorescence. Quantum dots with different energy band widths can be obtained by adjusting the size of quantum dots. Quantum dots with different energy band widths will emit photons of different energies under excitation conditions of a certain wavelength, that is, light of diff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02H01L51/50H01L51/54H01L51/56
CPCC09K11/02H10K71/10H10K50/11H01L33/04H01L31/0216H01L33/44C09K11/883C09K11/025B82Y20/00B82Y40/00B82Y30/00H10K50/115H10K71/00H10K85/111H10K85/381H10K85/1135
Inventor 聂志文刘文勇
Owner TCL CORPORATION
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