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Preparation method and application of nanoflower array structure

A technology of array structure and nanoflowers, which is applied in the field of preparation of nanoflower array structures, can solve the problems of complex preparation steps and achieve high SERS activity

Active Publication Date: 2021-06-29
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation steps of using AAO film as a substrate are more complicated, and at the same time, the AAO film must be transferred to other substrates, and it is impossible to prepare a large-area high-density ordered array structure.

Method used

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  • Preparation method and application of nanoflower array structure
  • Preparation method and application of nanoflower array structure
  • Preparation method and application of nanoflower array structure

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preparation example Construction

[0032] A method for preparing a nanoflower array structure, comprising the following preparation steps:

[0033] (1) Place the silicon wafer in a mixed solution of ammonia water, hydrogen peroxide and deionized water with a volume ratio of 1:2-3:5-6, heat it to boiling for 5-10 minutes, cool it, and place the silicon wafer in sequence Deionized water and absolute ethanol were ultrasonically cleaned for 10-20 minutes;

[0034] (2) A hexagonal close-packed polystyrene microsphere array structure is prepared by a self-assembly method, and the diameter of the polystyrene microspheres in the hexagonal close-packed polystyrene microsphere array structure is 200-500nm;

[0035] (3) Plasma etching the hexagonal close-packed polystyrene microsphere array structure, the etching gas is the volume ratio O 2 :Ar=4-5:1 mixed gas to prepare a sputtering substrate, the diameter of polystyrene microspheres after etching is 100-250nm, and the distance between polystyrene microspheres is 100-25...

Embodiment 1

[0038] A method for preparing a nanoflower array structure, comprising the following preparation steps:

[0039] (1) Place the silicon wafer in a mixed solution of ammonia water, hydrogen peroxide and deionized water with a volume ratio of 1:2:6, heat it to boiling for 5 minutes, and cool it. Ethanol ultrasonication for 15 minutes to clean the silicon wafer;

[0040] (2) A hexagonal close-packed polystyrene microsphere array structure is prepared by self-assembly method, and the diameter of the polystyrene microspheres in the hexagonal close-packed polystyrene microsphere array structure is 500 nm;

[0041] (3) Plasma etching the hexagonal close-packed polystyrene microsphere array structure, the etching gas is the volume ratio O 2 :Ar=4-5:1 mixed gas to prepare a sputtering substrate, the diameter of polystyrene microspheres after etching is 150nm, and the distance between polystyrene microspheres is 200nm;

[0042] (4) Using gold sputtering target, at 10W, 1×10 -5 Under ...

Embodiment 2

[0044] A method for preparing a nanoflower array structure, comprising the following preparation steps:

[0045] (1) Place the silicon wafer in a mixed solution of ammonia water, hydrogen peroxide and deionized water with a volume ratio of 1:3:5, heat it to boiling for 10 minutes, then cool it, and then place the silicon wafer in deionized water and anhydrous Ethanol ultrasonic 10min to clean the silicon wafer;

[0046] (2) A hexagonal close-packed polystyrene microsphere array structure is prepared by self-assembly method, and the diameter of the polystyrene microspheres in the hexagonal close-packed polystyrene microsphere array structure is 400nm;

[0047] (3) Plasma etching the hexagonal close-packed polystyrene microsphere array structure, the etching gas is the volume ratio O 2:Ar=4-5:1 mixed gas to prepare a sputtering substrate, the diameter of polystyrene microspheres after etching is 100nm, and the distance between polystyrene microspheres is 150nm;

[0048] (4) Us...

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Abstract

The invention discloses a preparation method and application of a nanoflower array structure, and relates to the technical field of nano composite material micromachining. The preparation method comprises the following preparation steps of (1), cleaning a silicon wafer; (2), preparing a hexagonal close-packed polystyrene microsphere array structure through a self-assembly method; (3), etching the hexagonal close-packed polystyrene microsphere array structure to obtain a sputtering substrate; and (4), carrying out inclined and rotary magnetron sputtering on the surface of the sputtering substrate. The prepared nanoflower array structure is provided with petal structures with sharp top ends and side edges, the petal structures provide abundant hot spots, and the distance between petals is relatively small, so that a great local coupling field can be obtained, and the SERS activity of the nanoflower array structure is high.

Description

technical field [0001] The invention relates to the technical field of micromachining of nanocomposite materials, in particular to a method for preparing a nanoflower array structure and its application. Background technique [0002] Surface-enhancement Raman scattering (Surface-enhancement Raman scattering, SERS) is based on the phenomenon of strong Raman scattering on rough metal surfaces, and it is a detection method for non-destructive characteristic identification. The spectrum of SERS technology not only has the characteristics of strong specificity and no damage to the sample in the ordinary Raman spectrum measurement process, but also has a higher detection limit, which makes up for the weak signal of traditional Raman signal detection. Therefore, SERS technology as a This powerful analysis tool has been widely used in chemical engineering, life science, national defense security, surface science and other fields. The uniform and ordered SERS substrate makes the SER...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/02C23C14/20G01N33/574B82Y15/00B82Y30/00B82Y40/00
CPCC23C14/35C23C14/022C23C14/205G01N33/57438G01N33/57476B82Y15/00B82Y30/00B82Y40/00Y02P70/50
Inventor 王雅新唐秀霞朱奥男赵晓宇张永军张小龙
Owner HANGZHOU DIANZI UNIV
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