Graphene-assisted vanadium oxide thermo-optical modulator and preparation process thereof

A vanadium oxide thermo-optic and graphene technology, applied in the field of light modulation, can solve the problems of poor thermal stability of microring light modulators, large insertion loss of plasma light modulators, low extinction of electroabsorption light modulators, etc. The effect of wide wavelength range, low insertion loss and small size

Inactive Publication Date: 2021-07-02
苏州微光电子融合技术研究院有限公司
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the thermal stability of the microring light modulator is very poor. In order to improve the thermal stability, a lot of temperature control design will be added to increase the cost; the extinction ratio of the electroabsorption light modulator is low; the insertion loss of the plasma light modulator is relatively large

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene-assisted vanadium oxide thermo-optical modulator and preparation process thereof
  • Graphene-assisted vanadium oxide thermo-optical modulator and preparation process thereof
  • Graphene-assisted vanadium oxide thermo-optical modulator and preparation process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0025] This embodiment provides a graphene-assisted vanadium oxide thermo-optic modulator, such as Figure 1-2 , comprising a substrate 1, a first insulating layer 2 formed on the substrate surface 1, a graphene layer 3 arranged on the first insulating layer 2, a second insulating layer 5 formed above the graphene layer 3, the The graphene-assisted vanadium oxide thermo-optic modulator also includes a metal electrode 4 deposited on the graphene layer 3 by photolithography or deposited on the second insulating layer by magnetron sputtering, reactive ion sputtering or deposited metal and then oxidized. 5 above the vanadium oxide film layer 6 .

[0026] The substrate is quartz, the first insulating layer is an ALD aluminum oxide layer with a thickness of 10-50nm, the second insulating layer is an ALD aluminum oxide layer with a thickness of 10-20nm, and the thickness of the vanadium oxide film layer is 50-200nm.

[0027] The metal electrode includes an adhesion layer in contact...

Embodiment approach 2

[0031] This embodiment provides a graphene-assisted vanadium oxide thermo-optic modulator, such as Figure 4 , comprising a substrate 1, a first insulating layer 2 formed on the surface of the substrate 1, a graphene layer 3 arranged on the first insulating layer 2, a second insulating layer 5 formed above the graphene layer 3, the graphite The ene-assisted vanadium oxide thermo-optic modulator also includes a metal electrode 4 deposited on the graphene layer 3 by photolithography or deposited on the second insulating layer 5 by magnetron sputtering, reactive ion sputtering or deposited metal and then oxidized. Vanadium oxide thin film layer 6 above.

[0032] The substrate is a silicon material, the first insulating layer is an ALD aluminum oxide layer with a thickness of 10-50nm, the second insulating layer is an ALD aluminum oxide layer with a thickness of 10-20nm, and the thickness of the vanadium oxide film layer is 50-200nm.

[0033] The metal electrode includes an adhe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a graphene-assisted vanadium oxide thermo-optical modulator and a preparation process thereof. The modulator comprises a substrate, wherein a first insulating layer is formed on the surface of the substrate, a graphene layer is disposed on the first insulating layer, and a second insulating layer is formed above the graphene layer. The graphene-assisted vanadium oxide thermo-optical modulator further comprises a metal electrode and a vanadium oxide thin film layer, wherein the metal electrode is arranged on the graphene layer through photoetching or deposition, and the vanadium oxide thin film layer is arranged on the second insulating layer in a magnetron sputtering, reactive ion sputtering or deposition metal reoxidation mode. The advantages are that excellent characteristics of graphene and vanadium oxide are fully utilized, and characteristics of small size, low insertion loss, high extinction ratio and wide operating wavelength range are realized.

Description

technical field [0001] The invention belongs to the technical field of light modulation, and in particular relates to a graphene-assisted vanadium oxide thermo-optic modulator and a preparation process thereof. Background technique [0002] Optical modulators can load electrical signals onto light waves, and small size and high extinction ratio optical modulators are of great significance. Graphene has superior electrical and thermal properties. When current passes through graphene, high temperature will be generated quickly. When the current stops, graphene will cool down rapidly. Vanadium oxide will change from a semiconductor state to a metal state when the temperature rises, and the light absorption coefficient changes drastically. Therefore, controlling the temperature of vanadium oxide can control its light absorption coefficient and realize the modulation of light. Using a graphene electric heat source, the optical coefficient of vanadium oxide can be changed to real...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01C23C14/00C23C14/08C23C14/18C23C14/35C23C14/58
CPCG02F1/0147C23C14/35C23C14/0036C23C14/083C23C14/185C23C14/5853
Inventor 黄北举程传同陈弘达
Owner 苏州微光电子融合技术研究院有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products