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An integrated mos adaptively controlled soi LIGBT

An adaptive control, bottom-up technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of weakening the conductance modulation effect and increasing the voltage drop of the device, achieving low turn-off loss and low forward conduction. Effects of on-voltage drop and long short-circuit withstand time

Active Publication Date: 2022-04-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since this technology weakens the conductance modulation effect when the device is turned on, it will increase the conductance voltage drop of the device

Method used

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  • An integrated mos adaptively controlled soi LIGBT

Examples

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Embodiment 1

[0016] Such as figure 1 As shown, the structure of this example includes an integrated MOS self-adaptive control SOI LIGBT, including a P substrate 1, a buried oxide layer 2, and a top semiconductor layer that are sequentially stacked from bottom to top; the top semiconductor layer has an N-type Doping, along the lateral direction of the device, both ends of the upper layer of the top semiconductor layer have a P well region 5 and an N-type buffer layer 4, and the N-type semiconductor between the P well region 5 and the N-type buffer layer 4 is an N drift region 3; the upper layer of the N-type buffer layer 4 has a P+ anode region 6, and the lead-out end of the P+ anode region 6 is an anode; the upper layer of the P well region 5 has an integrated MOS structure in the direction close to the N-type buffer layer 4, and is arranged side by side. The P+ region 8 and the N+ region 7, the fourth P+ body contact region 23, and the integrated MOS structure and the P+ region 8 are isol...

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PUM

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Abstract

The invention belongs to the technical field of power semiconductors and relates to an integrated MOS self-adaptive control SOI LIGBT. The main feature of the invention is that three MOS transistors are integrated on the cathode side of the SOI LIGBT and are isolated from each other by oxidation isolation grooves. The MOS tube can realize adaptive control of SOI LIGBT through electrical connection. During forward conduction, the integrated MOS adaptively controls the SOI LIGBT parasitic diode to turn on, enhances the conductance modulation effect, reduces the device conduction voltage drop, and increases the device saturation current; during the turn-off process, the integrated MOS adaptively assists in depleting the drift region and provides additional The hole extraction channel effectively reduces the turn-off loss; in the short-circuit state, the integrated MOS adaptively controls the cut-off of the SOI LIGBT parasitic diode, suppresses the latch-up effect, and improves the short-circuit resistance of the device. The beneficial effect of the invention is that, compared with the traditional SOI LIGBT structure, the invention has lower turn-on voltage drop, lower turn-off loss, higher saturation current and longer short-circuit withstand time.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and relates to an integrated MOS self-adaptive control SOI LIGBT (Lateral Insulated Gate Bipolar Transistor, lateral insulated gate bipolar transistor). Background technique [0002] As a typical representative of electronic power devices, IGBT not only has the advantages of high input impedance, good gate control ability and simple driving circuit of MOSFET, but also has the advantages of high current density, low conduction voltage drop and strong current handling capacity of BJT. At present, it has been widely used in high-speed rail, power grid, smart home appliances and new energy vehicles and other fields. Due to the use of dielectric isolation, SOI-based LIGBT has the advantages of small leakage current, small parasitic capacitance, and strong radiation resistance. In addition, lateral IGBT (LIGBT) is easy to integrate, making SOI LIGBT a core component of monolithic power in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L27/12
CPCH01L29/7394H01L27/1203H01L29/0619H01L29/0684
Inventor 罗小蓉苏伟马臻张森杨可萌魏杰樊雕王晨霞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA