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Packaging structure of high-power LED device

A technology of LED device and packaging structure, applied in the direction of semiconductor devices, electrical components, tubes/pipe joints/pipe fittings, etc., can solve the problems of reducing the luminous efficiency of phosphor powder, reducing the life of LED devices, poor heat dissipation, etc. LED light efficiency and life, the effect of improving heat dissipation

Pending Publication Date: 2021-07-13
宜兴曲荣光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Generally, the packaging of white LEDs needs to evenly spray phosphor powder on the surface of blue LED chips. The phosphor powder is in direct contact with the LED chip, but it is prone to overheating under long-term high-current working conditions, which will reduce the luminous efficiency of the phosphor powder. thus reducing the lifetime of the LED device
In order to make the light more concentrated, some LED lamps will be equipped with reflective walls, but the reflective walls will absorb a lot of heat, resulting in high temperature of LED devices, even if some LED devices are separated from the phosphor and the LED chip, the problem of poor heat dissipation It is also easy to reduce the luminous efficiency of phosphor powder, thereby reducing the life of LED devices

Method used

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  • Packaging structure of high-power LED device

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Embodiment 1

[0024] The packaging structure of the high-power LED device of the present embodiment, such as figure 1 As shown, it includes a substrate, an LED chip 13 fixedly connected to the substrate, a heat insulating layer 14 covering the LED chip 13, and a fluorescent light arranged above the heat insulating layer 14 to realize white light of different color temperatures of the LED device. A powder layer 15, a copper layer 11 is deposited on the surface of the substrate, and a reflective wall 12 surrounding the LED chip 13 is deposited on the copper layer 11. The reflective wall 12 can increase the aggregation degree of light, thereby increasing the emissivity.

[0025] The substrate is a porous PCB substrate 10 with a pore diameter of 300 μm and a pitch of 600 μm. The copper layer 11 passes through the through hole of the porous PCB substrate 10 and is deposited on the side of the porous PCB substrate 10 away from the LED chip 13 . In this embodiment, a porous PCB substrate 10 is us...

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Abstract

The invention discloses a packaging structure of a high-power LED device, and relates to the field of semiconductor illumination. The packaging structure comprises a substrate, an LED chip fixedly connected with the substrate, a heat insulation layer covering the LED chip, and a fluorescent powder layer which is arranged above the heat insulation layer and realizes white light of different color temperatures of the LED device. A copper layer is deposited on the surface of the substrate, and a reflecting wall surrounding the LED chip is deposited on the copper layer. According to the packaging structure of the high-power LED device provided by the invention, the heat insulation layer is arranged between the LED chip and the fluorescent powder layer, so that the problems that the service life of fluorescent powder in the light conversion layer is influenced by heat generated by a high-power LED in a high-current working process, and the luminous efficiency, the service life and the like of the LED are influenced are effectively solved, and then the service life of the LED device is greatly prolonged. The method has the advantages of simple preparation, high conversion efficiency, low cost and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, and in particular relates to a package structure of a high-power LED device. Background technique [0002] LED refers to a light-emitting diode, which is made of compounds containing gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N), etc., and can radiate visible light when electrons and holes recombine; among them, gallium arsenide diode emits Red light, gallium phosphide diodes emit green light, silicon carbide diodes emit yellow light, and gallium nitride diodes emit blue light. [0003] Generally, LED chips have three types of chip structures: front-mount, vertical, and flip-chip. The p and n electrodes of the front-mounted structure and the flip-chip LED chip are on the same side of the LED chip. The chip is prone to current crowding under high current, resulting in a large amount of heat generated inside the chip, and the thermal resistance is high. High-power LED lamps need t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/64H01L33/62F16L59/02
CPCF16L59/029H01L33/62H01L33/641
Inventor 高芳亮
Owner 宜兴曲荣光电科技有限公司