CMOS analog-to-digital converter suitable for deep hypothermia environment

Abstract

The invention discloses a CMOS analog-to-digital converter suitable for a deep hypothermia environment. The CMOS analog-to-digital converter comprises a reference voltage division circuit which generates a reference voltage signal; the low-temperature rail-to-rail dynamic comparator is used for comparing an external input signal with a reference voltage signal and generating a comparison result in a thermometer coding form; the bubble error elimination array eliminates the error of the dynamic comparator and generates a one-hot code signal; the binary coding circuit codes the one-hot code into a binary signal; and the output enhancement circuit drives an external load. A two-stage complementary pre-amplifier is adopted in the dynamic comparator, so that rail-to-rail voltage input in a full-temperature region (4.2 K to normal temperature) is realized.

Description

technical field [0001] The invention relates to a low-temperature CMOS analog-to-digital comparator circuit module, which belongs to the technical field of microelectronics. Background technique [0002] As a representative of the cutting-edge technology of integrated circuits, cryogenic electronics has broad application prospects in aerospace applications, quantum / superconducting computing, and supercomputers. For silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), the low-temperature environment will change many of its electrical characteristics, such as an increase in conduction current, a decrease in leakage current, and an increase in threshold voltage, which in turn affects the performance of the corresponding CMOS integrated circuit. performance. Among them, the analog-to-digital converter (ADC) is the most common circuit module in information systems. Its input voltage range and dynamic characteristics directly determine the performance of qu...

AI Technical Summary

Problems solved by technology

Due to the influence of the threshold voltage drift caused by the freeze-out effect of carriers at low temperatures in MOSFETs, the input voltage range of traditional ADC circuits will decrease as the temperature decreases, thus losing the rail-to-rail input characteristics; at deep low temperatures (liquid nitrogen temperature 77K below) may even cause the circuit not to work properly

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