P-type bismuth telluride-based alloy material and preparation method thereof

A bismuth telluride-based alloy technology, applied in thermoelectric device node lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems of difficult processing, weak processing strength, low yield, etc., to improve mechanical properties , high orientation, and the effect of improving thermoelectric properties and mechanical properties

Active Publication Date: 2021-07-23
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the intrinsic layered structure of bismuth telluride-based materials, it is very easy to cleavage along the c-axis crystal plan

Method used

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  • P-type bismuth telluride-based alloy material and preparation method thereof
  • P-type bismuth telluride-based alloy material and preparation method thereof
  • P-type bismuth telluride-based alloy material and preparation method thereof

Examples

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Effect test

Embodiment 1

[0041] An embodiment of a p-type bismuth telluride-based alloy material and a preparation method thereof of the present invention is as follows:

[0042] (1) With p-type Bi 0.5 Sb 1.5 Te 3 The stoichiometric ratio of the raw materials is 1.2Kg in total of Bi, Sb, and Te block materials, which are added to the high borosilicate glass tube in the order of Sb, Bi, and Te, and then vacuum-sealed;

[0043] (2) Put the high borosilicate glass tube into the swing furnace and preheat it at 700°C for 5 minutes, then swing and smelt it for 5 minutes, then take out the high borosilicate glass tube and shake it well, then put it back into the swing furnace for refining for 2 minutes, then take it out The high borosilicate glass tube leans vertically on the iron frame, tap the glass tube to make the melt on the wall of the glass tube slide down, the bubbles in the melt rise up, exhaust the bubbles, and cool down to room temperature naturally;

[0044] (3) Fix the glass tube cooled in st...

Embodiment 2

[0048] An embodiment of a p-type bismuth telluride-based alloy material and a preparation method thereof of the present invention is as follows:

[0049] (1) With p-type Bi 0.5 Sb 1.5 Te 3 The stoichiometric ratio of the raw materials is 1.2Kg in total of Bi, Sb, and Te block materials, which are added to the high borosilicate glass tube in the order of Sb, Bi, and Te, and then vacuum-sealed;

[0050] (2) Put the high borosilicate glass tube into the swing furnace and preheat it at 700°C for 3 minutes, then swing and smelt it for 5 minutes, then take out the high borosilicate glass tube and shake it well, then put it back into the swing furnace for refining for 3 minutes, then take it out The high borosilicate glass tube leans vertically on the iron frame, tap the glass tube to make the melt on the wall of the glass tube slide down, the bubbles in the melt rise up, exhaust the bubbles, and cool down to room temperature naturally;

[0051] (3) Fix the glass tube cooled in st...

Embodiment 3

[0055] An embodiment of a p-type bismuth telluride-based alloy material and a preparation method thereof of the present invention is as follows:

[0056] (1) With p-type Bi 0.5 Sb 1.5 Te 3 The stoichiometric ratio of the raw materials is 1.5Kg of the raw materials Bi, Sb, and Te block materials, and they are added to the high borosilicate glass tube in the order of Sb, Bi, and Te, and the tube is vacuum sealed;

[0057] (2) Put the high borosilicate glass tube into the swing furnace and preheat it at 700°C for 5 minutes, then swing and smelt it for 7 minutes, then take out the high borosilicate glass tube and shake it well, then put it back into the swing furnace for refining for 3 minutes, then take it out The high borosilicate glass tube leans vertically on the iron frame, tap the glass tube to make the melt on the wall of the glass tube slide down, the bubbles in the melt rise up, exhaust the bubbles, and cool down to room temperature naturally;

[0058] (3) Fix the glas...

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Abstract

The invention discloses a p-type bismuth telluride-based alloy material and a preparation method thereof, and belongs to the technical field of thermoelectric materials. The preparation method of the preferentially oriented p-type bismuth telluride-based alloy material comprises the following steps: (1) carrying out zone melting on a p-type bismuth telluride-based alloy precursor to obtain a p-type bismuth telluride-based alloy crystal bar; and (2) putting the p-type bismuth telluride-based alloy crystal bar obtained in the step (1) into a hammer mill screening machine to be hammered and screened, and obtaining the p-type bismuth telluride-based alloy material. The preparation method combining zone melting and hammering screening is adopted, the prepared p-type bismuth telluride-based alloy material has high orientation in the (00l) crystal face direction, and a high-orientation raw material can be provided for research and improvement of the p-type bismuth telluride-based thermoelectric material by applying a powder metallurgy process for experimental development; and the thermoelectric performance and the mechanical performance of the material are easy to improve.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and in particular relates to a p-type bismuth telluride-based alloy material and a preparation method thereof. Background technique [0002] Thermoelectric materials can realize the direct conversion of heat energy and electric energy. They are a new type of clean renewable energy materials. They have excellent characteristics such as no pollution, no loss, and high reliability. They are expected to greatly improve energy utilization and alleviate environmental pollution. [0003] Among them, bismuth telluride-based compounds are commercially used thermoelectric materials with the best performance near room temperature. Due to the intrinsic layered structure of bismuth telluride-based materials, it is very easy to cleavage along the c-axis crystal plane, resulting in very weak processing strength of the material, resulting in a very low processing yield and high processing diffic...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/16
CPCH10N10/852H10N10/01
Inventor 苏紫珊蔡新志朱刘童培云肖惠云
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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