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Light emitting diode

A technology of light-emitting diodes and light-emitting elements, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting reflection efficiency, etc., and achieve the effects of improving luminous efficiency, packaging yield, and adhesion

Active Publication Date: 2021-07-23
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing full structure of the DBR reflection layer, the interfaces between different material layers of the DBR reflection layer are all the same flat surface, therefore, as figure 1 As shown, when the incident angle of the light emitted from the active layer is greater than the critical angle, total reflection will occur, and part of the light that undergoes the first total reflection enters the low refractive index material from the high refractive index material, and it will occur twice or twice More than 2 times of full emission lead to absorption and attenuation, thus affecting the reflection efficiency

Method used

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  • Light emitting diode
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Examples

Experimental program
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Embodiment 1

[0063] This embodiment provides the following light emitting diode, such as figure 2 The cross-sectional schematic diagram shown, which includes: 101: substrate; 102: first conductivity type semiconductor layer; 103: active layer; 104: second conductivity type semiconductor layer; 105: transparent conductive layer; 106: first electrode; 107 : second electrode; 108 : DBR reflective layer.

[0064] Substrate 101 is a growth substrate for semiconductor epitaxial stacked epitaxial growth, which can be an insulating substrate or a conductive substrate, including sapphire (Al 2 o 3 ) or spinel (MgA1 2 o 4 ) insulating substrates; silicon carbide (SiC), ZnS, ZnO, Si, GaAs, diamond; and oxide substrates such as lithium niobate and niobium gallate that match the nitride semiconductor lattice. The substrate 101 includes a first surface S101A and a second surface S101B opposite to the first surface. The substrate 101 may include a plurality of protrusions formed on at least a parti...

Embodiment 2

[0083] The difference from Example 1 is that in Example 1, the roughness of the interface between the first and second material layers in the N group of material layers of the DBR reflective layer starting from the second surface S101B of the substrate is greater than that of the other (M-N) groups The refractive index of the interface between the first and second material layers in a pair of material layers. However, this embodiment is another alternative to embodiment 1, such as Image 6 As shown, there are continuous N groups of material layer pairs in the middle region of the DBR reflective layer structure, and the roughness of the interface between the first and second material layer pairs in the N group of material layer pairs is greater than that of the remaining (M-N) group material layer pairs The refractive index of the interface between the first and second material layers. By roughening the interface between the first and second material layers of the N group of m...

Embodiment 3

[0085] The difference from Example 1 is that in Example 1, the roughness of the interface between the first and second material layers in the N group material layer pair of the DBR reflective layer starting from the second surface S101B of the substrate is greater than that of the other (M-N) group materials The refractive index of the interface between the first and second material layers in a layer pair. However, this embodiment is another alternative to embodiment 1, such as Figure 7 As shown, there are continuous N groups of material layer pairs in the end region of the DBR reflective layer structure, and the roughness of the interface between the first and second material layer pairs in the N group of material layer pairs is greater than that of the remaining (M-N) groups of material layer pairs The refractive index of the interface between the first and second material layers. By roughening the interface between the first and second material layers in the N group of ma...

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Abstract

A light emitting diode at least comprises: a semiconductor epitaxial stack having a first surface and a second surface opposite to each other; and a DBR reflecting layer (108), which is arranged on the second surface of the semiconductor epitaxial laminated layer and comprises M groups of material layer pairs formed by alternately stacking a material layers with different refractive indexes, wherein a is larger than or equal to 2 and smaller than or equal to 6. The light emitting diode is characterized in that: N groups of material layer pairs exist in the M groups of material layer pairs of the DBR reflecting layer (108), the roughness of interfaces among a material layers in the N groups of material layer pairs is larger than that of interfaces among a material layers in the rest (M-N) groups of material layer pairs, and N is larger than M and larger than or equal to 1. By coarsening the interface between the material layers in the DBR reflecting layer (108), the luminous efficiency can be increased; meanwhile, the adhesive force between material layers of the DBR reflecting layer (108) and between the DBR reflecting layer (108) and the substrate (101) can be improved, the phenomena of cutting back collapse and thrust peeling can be improved, and the product yield can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, more specifically, to a light emitting diode. Background technique [0002] Light Emitting Diode (LED for short) has the advantages of high luminous intensity, high efficiency, small size, and long service life, and is considered to be one of the most potential light sources at present. In recent years, LEDs have been widely used in daily life, such as lighting, signal display, backlight, car lights, and large-screen displays. At the same time, these applications also put forward higher requirements for the brightness and luminous efficiency of LEDs. [0003] At present, there are two main factors restricting the luminous efficiency of LED devices: internal quantum efficiency and external quantum efficiency. Internal quantum efficiency refers to the efficiency of converting injected electrical energy into light energy. The current technology has reached 70-80%. For epitaxia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/10H01L33/22H01L33/48H01L25/075
CPCH01L33/38H01L33/46H01L33/22H01L33/10H01L33/0008H01L25/0753
Inventor 唐宏彬邓有财庄曜玮吴霁圃吴嘉文黄文嘉张中英
Owner QUANZHOU SANAN SEMICON TECH CO LTD