Semiconductor device and preparation method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve the problems of easy lodging, decreased device performance and stability, large virtual line height and width, etc., to prevent lodging, improve performance and stability, and enhance strength. Effect
CN113192954AActive Publication Date: 2021-07-30FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
Publication Date
2021-07-30

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Abstract

The invention provides a semiconductor device and a preparation method thereof. A substrate is provided with a storage unit region, a peripheral circuit region and a junction region located between the storage unit region and the peripheral circuit region; the plurality of bit lines are located on the substrate, are arranged at intervals in the first direction and extend into the junction area from the storage unit area in the second direction; the plurality of virtual lines are located on the substrate in the junction area, one virtual line is in butt joint with the end of one bit line and is aligned with the bit line in the second direction, and each virtual line comprises a first insulating layer and a second insulating layer which are sequentially stacked on the substrate. According to the invention, the transverse width of the bottom of the first insulating layer is larger than that of the top, the strength of the virtual line is enhanced by increasing the width of the bottom of the virtual line, the virtual line is prevented from lodging due to a bigger height-width ratio, and the performance and stability of the device are improved; moreover, since only the width of the bottom of the virtual line is increased, various parameters of the device are not affected.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a preparation method thereof. Background technique

[0002] A memory, such as a dynamic random access memory (DRAM), generally has a memory cell array, and the memory cell array includes a plurality of memory cells arranged in an array. The memory has a plurality of word line structures and bit line structures, the word line structures are buried in the substrate, the bit line structures are formed on the substrate and electrically connected with corresponding memory cells, and the memory also includes a capacitor structure , the capacitance structure is used to store charges representing stored information, and the storage units can be electrically connected to the capacitance structure through a node contact structure, so as to realize the storage function of each storage unit.

[0003] The memory also has a storage unit area and a peripheral ...

Claims

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