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A high voltage LDO linear power supply realized by low voltage mosfet

A linear power supply, high-voltage technology, applied in electrical components, regulating electrical variables, output power conversion devices, etc., can solve the problems of low voltage withstand voltage of digital MOSFET, can not provide high-voltage LDO linear power supply, etc., to avoid circuit system Effects of damage, wide application range, high power supply rejection ratio

Active Publication Date: 2021-09-17
CHENGDU AMBIT TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a high-voltage resistant LDO linear power supply implemented by low-voltage MOSFETs, which is used to solve the problem that the internal digital MOSFET voltage of the system is getting lower and lower under the low-middle process technology in the prior art, and cannot provide a high-voltage resistant LDO linear power supply. The problem

Method used

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  • A high voltage LDO linear power supply realized by low voltage mosfet
  • A high voltage LDO linear power supply realized by low voltage mosfet
  • A high voltage LDO linear power supply realized by low voltage mosfet

Examples

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Embodiment

[0041] combined with figure 1 As shown, a high-voltage resistant LDO linear power supply implemented by low-voltage MOSFETs includes a power supply voltage conversion module, a low-voltage multi-stage gain improvement module 2, a high-voltage driving module 3, a power supply module 4 and a voltage clamping module 5, wherein:

[0042] The power supply voltage conversion module is used to convert the external power supply voltage into an output voltage lower than the withstand voltage limit of the MOSFET to provide the working voltage for the low-voltage multi-stage gain improvement module 2, and output the intermediate level as the control voltage of the power supply module 4;

[0043] The low-voltage multi-stage gain improvement module 2 is used to output the high-gain voltage to the high-voltage driving module 3 and receive the feedback signal of the voltage clamping module 5;

[0044] The high-voltage drive module 3 is provided with an external power supply voltage to conver...

Embodiment 2

[0051] On the basis of Example 1, in conjunction with the attached figure 2 As shown, the power supply voltage conversion module includes a MOS transistor M1, a MOS transistor M2, a MOS transistor M3, and a MOS transistor M4. The drain of the MOS transistor M1 is connected to an external power supply after the drain of the MOS transistor M1 is connected in series with a resistor R2 and a resistor R1, and the resistor R2 is connected in parallel with a plurality of diodes ( Diodes D1-D6), the gate of MOS transistor M1 is connected to the gate of MOS transistor M4 after being connected to the gate of MOS transistor M4 in series with resistor R5; the first output voltage control circuit for adjusting the output voltage is connected between the source of MOS transistor M1 and the ground; the MOS transistor The drain of M2 is connected to an external power supply after connecting resistor R4 and resistor R3 in series, resistor R4 is connected in parallel with diode D14, diode D11, ...

Embodiment 3

[0057] On the basis of embodiment 1 or 2, in conjunction with the attached image 3As shown, the low-voltage multi-stage gain improvement module 2 adopts an enhanced operational amplifier module, and uses a differential output to provide high gain. The low-voltage multi-stage gain improvement module 2 includes MOS transistors M8, MOS transistors M9, MOS transistors M13, MOS transistors M17, and MOS transistors M21 whose sources are connected to the power supply voltage conversion module and which are connected to the common gate; the drain of the MOS transistor M8 The source of the MOS transistor M7 is connected; the drain of the MOS transistor M9 is connected to the source of the MOS transistor M10; the drain of the MOS transistor M13 is connected to the source of the MOS transistor M14; the drain of the MOS transistor M17 is connected to the source of the MOS transistor M18; The drain of MOS transistor M21 is connected to the source of MOS transistor M22; the common gate of ...

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Abstract

The invention discloses a high-voltage-resistant LDO linear power supply realized by low-voltage MOSFETs, including a power supply voltage conversion module, a low-voltage multi-stage gain improvement module, a high-voltage drive module, a power supply module and a voltage clamping module, wherein the output of the power supply voltage conversion module is lower than The voltage of the MOSFET withstand voltage limit reaches the control voltage of the low-voltage multi-stage gain boost module and the output power supply module; the low-voltage multi-stage gain boost module outputs high-gain voltage to the high-voltage drive module; the high-voltage drive module converts the input voltage into a current and then converts it into The high voltage is output to the power supply module; the power supply module is connected to the output terminal of the power supply; the voltage clamp module extracts the sampling voltage and feeds it back to the low-voltage multi-stage gain improvement module. The invention has the advantages of small area and high chip integration. Compared with the traditional LDO power supply, this structure has a higher power supply rejection ratio, stronger anti-interference ability to external power supply, and provides a high-voltage-resistant power supply.

Description

technical field [0001] The invention relates to the technical field of integrated power supplies, in particular to a high-voltage resistant LDO linear power supply realized by low-voltage MOSFETs. Background technique [0002] In recent years, various mobile electronic products have become more and more popular. With the advancement of semiconductor technology and the higher integration of various types of chips, electronic products are developing towards high performance, low power consumption, and small area. However, as the process technology decreases, its withstand voltage capability also decreases accordingly. Under low process technology, the withstand voltage of the internal digital MOSFET in the system is also getting lower and lower, and it cannot provide a high-voltage resistant LDO linear power supply; and ordinary analog MOSFETs cannot support high voltage. The power supply voltage (such as using more 5V power supply). Contents of the invention [0003] The p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/158H02M1/088H02M1/32H02M1/44H03F3/45
CPCH02M1/088H02M1/32H02M1/44H02M3/158H03F3/45179
Inventor 周彬
Owner CHENGDU AMBIT TECH CO LTD