Etching solution
A technology of etching solution and auxiliary agent, applied in the field of etching solution, can solve the problems of destroying the circuit structure of the conductive film and causing great harm, and achieve the effects of uniform etching, improving the use efficiency and improving the technical effect.
Inactive Publication Date: 2021-08-06
肇庆微纳芯材料科技有限公司
View PDF1 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, the silver ion composition dissolved in the etching solution is easy to precipitate metallic silver on the conductive film during the etching process, thereby destroying the circuit structure of the conductive film, and the thinner the circuit, the greater the harm
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
preparation example Construction
[0035] Preparation of silver etching solution:
[0036] Mix the inorganic acids, organic acid compounds, inorganic acid salt compositions, surfactant compositions, organic compound additives and water with corresponding contents as described in Table 1 below, stir for 60 minutes, and filter through a 0.2 μm filter element to obtain the corresponding silver etchant.
[0037]
[0038]
[0039] Organic auxiliary agent 1 is 2-phenyl-4-(N'-ethylamine-2'-benzimidazolyl)-1,3-dioxolane;
[0040] Organic auxiliary agent 2 is 2-phenyl-4-(N'-propylamine-2'-benzoimidazolyl)-1,3-dioxolane.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to an etching solution. The solution is used for etching treatment of a silver nanowire transparent conductive film in a panel display manufacturing process, and belongs to the technical field of metal material surface treatment. The etching solution comprises inorganic acid, organic acid, inorganic acid salt, a surfactant, an auxiliary agent and deionized water, the auxiliary agent contains a benzimidazole compound, and the structural formula of the auxiliary agent is shown in the specification, wherein in the formula, R1 is C1-C5 straight-chain or branched-chain alkane, and R2 is a hydrogen, C5-C12 aromatic ring group, C5-C12 monocyclic group, C5-C12 bicyclic group or C5-C12 tricyclic group substituent group. Ar is a benzene, naphthalene or anthracene structure substituent. The etching solution can efficiently etch the silver nanowire transparent conductive film, and meanwhile the problem of metal silver precipitation is well solved.
Description
technical field [0001] The invention relates to an etching solution, which is used for the etching treatment of silver nanowire transparent conductive films in the flat panel display process, and belongs to the technical field of metal material surface treatment. Background technique [0002] With the development of artificial intelligence and the Internet of Things, more and more devices will be installed with chips and generate data through various sensors. The storage, processing and output of data form a huge big data system. Usually the output needs a human-computer interaction interface, which is what we usually call a screen. Organic Light-Emitting Diode (OLED), due to its advantages of high luminous efficiency, self-illumination, all-solid-state, high color contrast, light weight, rich luminescent materials, wide operating voltage range and 3D display, has become an One of the most competitive display products at present. [0003] The optoelectronic properties of ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): C23F1/30
CPCC23F1/30
Inventor 李海涛
Owner 肇庆微纳芯材料科技有限公司
Features
- R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
Why Patsnap Eureka
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com