A kind of preparation method of semiconductor structure

Abstract

The invention relates to the field of semiconductor element preparation, and specifically discloses a method for preparing a semiconductor structure. First, a dielectric layer is formed on a substrate, an anti-reflection layer is formed on the dielectric layer, a photoresist layer A is formed on the anti-reflection layer, and Expose and develop the photoresist layer A. Under the action of the anti-reflection layer, the arc-shaped part of the dielectric layer at the gate structure will not reflect light, avoiding the problem of defects or even peeling off of the patterned photoresist layer. Then etch the opening, remove the anti-reflection layer, and finally form a silicide layer; the present invention adopts a processing device to remove the anti-reflection layer, and the processing device includes a fixed shaft, a clamping mechanism, a loading tray and an adjusting mechanism, and the clamping mechanism is used for clamping Loading tray, the loading tray is loaded with components, and the adjustment mechanism is used to adjust the clamping mechanism to enter and exit the dissolving pool, flushing pool and drying mechanism sequentially, so as to realize the dissolution, rinsing and drying of the anti-reflection layer on the component, and realize the automatic processing .

Description

technical field [0001] The invention relates to the field of semiconductor element preparation, in particular to a method for preparing a semiconductor structure. Background technique [0002] At present, high-voltage transistors are widely used in integrated high-voltage power management circuits of various industrial electronic equipment and consumer electronic equipment, or in memory read and write circuits. Usually, the input voltage of high-voltage transistors is relatively high (5V ~ 600V). Therefore, when high-voltage transistors are used as When the power transistor is applied, it should have a higher breakdown voltage (breakdown voltage) to improve the stability of the work. In order to achieve a higher breakdown voltage, a longer drift area (drift area, formed between the gate and Source or gate and drain) to withstand high voltage, no metal silicide can be formed on the drift region. High-voltage transistors need to form silicide layers on the source, drain, and ...

AI Technical Summary

Problems solved by technology

High-voltage transistors need to form silicide layers on the source, drain, and gate to reduce contact resistance. In order to realize this device structure, photoresist is needed to define the drift region, and one side of the photoresist will fall on the gate. On the pole side wall, when exposed, scattered light is likely to be reflected by the side wall, causing the bottom of the photoresist to be exposed, resulting in peeling off of the photoresist, which will cause the problem of low yield of high-voltage transistors

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