Preparation method of semiconductor structure

Abstract

The invention relates to the field of preparation of semiconductor elements, and particularly discloses a preparation method of a semiconductor structure, which comprises the following steps: firstly, forming a dielectric layer on a substrate, forming a reflection-resistant layer on the dielectric layer, forming an A photoresist layer on the reflection-resistant layer, and exposing and developing the A photoresist layer. Under the effect of thereflection-resistant layer, the arc-shaped part of the dielectric layer at the gate structure does not reflect light, so that the problem that the patterned photoresist layer generates defects and is even stripped off is avoided, then the opening is etched, the reflection-resistant layer is removed, and finally the silicide layer is formed. the processing device is adopted to remove the anti-reflection layer, the processing device comprises a fixing shaft, a clamping mechanism, a loading tray and an adjusting mechanism, the clamping mechanism is used for clamping the loading tray, elements are loaded in the loading tray, and the adjusting mechanism is used for adjusting the clamping mechanism to intermittently and sequentially enter and exit from a dissolving tank, a flushing tank and a drying mechanism. The reflection-resistant layer layer on the element is dissolved, washed and dried, and automatic machining is achieved.

Description

technical field [0001] The invention relates to the field of semiconductor element preparation, in particular to a method for preparing a semiconductor structure. Background technique [0002] At present, high-voltage transistors are widely used in integrated high-voltage power management circuits of various industrial electronic equipment and consumer electronic equipment, or in memory read and write circuits. Usually, the input voltage of high-voltage transistors is relatively high (5V ~ 600V). Therefore, when high-voltage transistors are used as When the power transistor is applied, it should have a higher breakdown voltage (breakdown voltage) to improve the stability of the work. In order to achieve a higher breakdown voltage, a longer drift area (drift area, formed between the gate and Source or gate and drain) to withstand high voltage, no metal silicide can be formed on the drift region. High-voltage transistors need to form silicide layers on the source, drain, and ...

AI Technical Summary

Problems solved by technology

High-voltage transistors need to form silicide layers on the source, drain, and gate to reduce contact resistance. In order to realize this device structure, photoresist is needed to define the drift region, and one side of the photoresist will fall on the gate. On the pole side wall, when exposed, scattered light is likely to be reflected by the side wall, causing the bottom of the photoresist to be exposed, resulting in peeling off of the photoresist, which will cause the problem of low yield of high-voltage transistors

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