Method for preparing metal-organic framework film through vapor-phase-assisted deposition

An organic framework, gas-phase assisted technology, applied in the field of vapor-assisted deposition thin film preparation, can solve problems such as the inability to meet the requirements of high-quality MOF thin film preparation

Pending Publication Date: 2021-09-07
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there are many methods for preparing MOF thin films, such as spin coating method, electrochemical method, liquid phase epitaxy method, in-situ deposition method, etc., but these methods are specific to the structure and physical and chemical properties of MOF, and cannot satisfy Fabrication of all high-quality MOF thin films, with many limitations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing metal-organic framework film through vapor-phase-assisted deposition
  • Method for preparing metal-organic framework film through vapor-phase-assisted deposition
  • Method for preparing metal-organic framework film through vapor-phase-assisted deposition

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0047]The preparation method of the present invention will be further described in detail in conjunction with specific examples below. It should be understood that the following examples are only for illustrating and explaining the present invention, and should not be construed as limiting the protection scope of the present invention. All technologies realized based on the above contents of the present invention are covered within the scope of protection intended by the present invention.

[0048] The experimental methods used in the following examples are conventional methods unless otherwise specified; the reagents and materials used in the following examples can be obtained from commercial sources unless otherwise specified.

Embodiment 1

[0050] 1) Preparation of PCN-222 thin film precursor material by vapor-assisted deposition method

[0051] Weigh 15mg of zirconium tetrachloride and 0.54g of benzoic acid and dissolve it in 1mL of DMF, place it in 130°C for 1 hour after ultrasonication for 15 minutes, then take 6mg of TCPP and add it to 1mL DMF solution for 15 minutes, then add TCPP solution into tetrachloride Zirconium chloride / benzoic acid solution, ultrasonic for 5 minutes, and place the above solution at 130° C. for 30 minutes to obtain a PCN222 precursor solution for use. The gas phase auxiliary solution is DMF.

[0052] The quartz substrate (1cm×1cm) was firstly ultrasonicated with acetone, 2M hydrochloric acid, and distilled water for 5 minutes, blown dry with nitrogen, and then placed in a solution of 0.02M NaOH and hydrogen peroxide (30%) with a volume ratio of 3:1 at 80°C. After 30 minutes, a hydroxyl-modified quartz substrate was obtained.

[0053] Take an airtight high-temperature-resistant glass...

Embodiment 2

[0058] 1) Preparation of NU-1000 thin film precursor material by vapor-assisted deposition method

[0059] Weigh 15mg of zirconium tetrachloride and 0.54g of benzoic acid and dissolve in 1mL of DMF, place it in 120°C for 1 hour after ultrasonication for 15 minutes, then take 8mg of TBAPy and add it into 1mL DMF solution for 15 minutes, then add TCPP solution into tetrachloride Zirconium chloride / benzoic acid solution, ultrasonic for 5 minutes, and the above solution was placed at 120°C for 30 minutes to obtain a NU-1000 precursor solution for use. The gas phase auxiliary solution is DMF.

[0060] The gold flake substrate (1cm×1cm) was firstly ultrasonicated with acetone, 2M hydrochloric acid, and distilled water for 5 minutes, blown dry with nitrogen gas, soaked in 11-mercapto-undecanol ethanol solution, and modified for 1 day to obtain hydroxyl-modified gold flakes base.

[0061] Take an airtight high-temperature-resistant glass bottle as a reaction vessel, put the base sup...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
areaaaaaaaaaaa
Login to view more

Abstract

The invention provides a method for preparing a metal-organic framework film through vapor-phase-assisted deposition. The method is based on the vapor-phase-assisted deposition method; a solvent used for synthesizing a metal-organic framework is used as a gas-phase-assisted solution; and the vapor-phase-assisted solution volatilizes at high temperature to assist a metal-organic framework precursor solution to prepare the metal-organic framework film. By adopting the method, the metal-organic framework film can be effectively prepared, and the prepared film is uniform in surface, continuous, compact, uniform in size and high in quality. The method does not need a precise instrument, and is simple to operate, novel, practical and high in universality.

Description

technical field [0001] The invention belongs to the technical field of gas-phase assisted deposition thin film preparation, and relates to a method for preparing a metal-organic framework thin film by gas-phase assisted deposition on the surface of a substrate. Background technique [0002] Metal-organic frameworks (metal-organic frameworks, referred to as "MOF", also known as porous coordination polymers, PCP) is a kind of inorganic-organic hybrid crystalline materials, which are formed by metal ions (or clusters) and organic ligands. Joined frame material. Due to its rich and diverse topological network structure, adjustable pore channels, and high specific surface area, it has important application prospects in the fields of molecular storage and separation, catalysis, optics, and electricity. In fields such as optoelectronic devices, sensing, and biological applications, MOF materials in the form of thin films have more efficient and direct applications. [0003] At pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C08G83/00C08J5/18C08L87/00
CPCC08G83/008C08J5/18C08J2387/00
Inventor 谷志刚肖义鈜康遥张健
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap